Datasheet

Electrical characteristics TS914, TS914A
4/17 Doc ID 4475 Rev 8
3 Electrical characteristics
Table 3. V
CC+
= 3 V, V
CC-
= 0 V, R
L
, C
L
connected to V
CC
/2, T
amb
= 25 °C (unless otherwise specified)
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
io
Input offset voltage
(V
icm
= V
o
= V
CC
/2)
TS914
TS914A
T
min
≤ T
amb
≤ T
max,
TS914
T
min
≤ T
amb
≤ T
max,
TS914A
10
5
12
7
mV
ΔV
io
Input offset voltage drift 5 μV/°C
I
io
Input offset current
(1)
T
min
≤ T
amb
≤ T
max
1 100
200
pA
I
ib
Input bias current
(1)
T
min.
≤ T
amb
≤ T
max
1 150
300
pA
I
CC
Supply current
per amplifier, A
VCL
= 1, no load
T
min
≤ T
amb
≤ T
max
200 300
400
μA
CMR Common mode rejection ratio V
icm
= 0 to 3 V, V
o
= 1.5 V 70 dB
SVR Supply voltage rejection ratio V
CC+
= 2.7 to 3.3 V, V
o
= V
CC
/2 80 dB
A
vd
Large signal voltage gain
R
L
= 10 kΩ, V
o
= 1.2 V to 1.8 V
T
min
≤ T
amb
≤ T
max
3
2
10
V/mV
V
OH
High level output voltage
V
id
= 1 V,
R
L
= 10 kΩ
R
L
= 600 Ω
R
L
= 100 Ω
V
id
= 1V, T
min
≤ T
amb
≤ T
max
R
L
= 10 kΩ
R
L
= 600 Ω
2.9
2.2
2.8
2.1
2.97
2.7
2
V
V
OL
Low level output voltage
V
id
= -1 V,
R
L
= 10 kΩ
R
L
= 600 Ω
R
L
= 100 Ω
V
id
= -1 V, T
min
≤ T
amb
≤ T
max
R
L
= 10 kΩ
R
L
= 600 Ω
50
300
900
100
600
150
900
mV
I
o
Output short-circuit current
V
id
= ±1 V
Source (V
o
= V
CC-
)
Sink (V
o
= V
CC+
)
40
40
mA
GBP Gain bandwidth product
A
VCL
= 100, R
L
=10kΩ,
C
L
= 100 pF, f = 100 kHz
0.8 MHz
SR Slew rate
A
VCL
=1, R
L
=10kΩ, C
L
= 100 pF,
V
in
=1.3Vto1.7V
0.5 V/μs
φ
m
Phase margin 30 °
e
n
Equivalent input noise voltage R
s
= 100 Ω, f = 1 kHz 30 nV/√Hz
V
O1
/V
O2
Channel separation f = 1 kHz 120 dB
1. Maximum values include unavoidable inaccuracies of the industrial tests.