Datasheet
ELECTRICALCHARACTERISTICS
V
CC
+
= 10V, V
CC
-
=0V,R
L
,C
L
connected to V
CC
/2, T
amb
=25
o
C (unless otherwise specified)
Symbol Parameter
TS912I/AI/BI
Unit
Min. Typ. Max.
V
io
Input Offset Voltage (V
ic
=V
o
=V
CC
/2) TS912
TS912A
TS912B
T
min.
≤ T
amb
≤ T
max.
TS912
TS912A
TS912B
10
5
2
12
7
3
mV
DV
io
Input Offset Voltage Drift 5 µV/
o
C
I
io
Input Offset Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 100
200
pA
I
ib
Input Bias Current - (note 1)
T
min.
≤ T
amb
≤ T
max.
1 150
300
pA
I
CC
Supply Current (per amplifier, A
VCL
= 1, no load)
T
min.
≤ T
amb
≤ T
max.
400 600
700
µA
CMR Common Mode Rejection Ratio V
ic
= 3 to 7V, V
o
=5V
V
ic
= 0 to 10V, V
o
=5V
60
50
90
75
dB
SVR Supply Voltage Rejection Ratio (V
CC
+
= 5 to 10V, V
O
=V
CC
/2) 60 90 dB
A
vd
Large Signal Voltage Gain (R
L
= 10kΩ,V
O
= 2.5V to 7.5V)
T
min.
≤ T
amb
≤ T
max.
15
10
50 V/mV
V
OH
High Level Output Voltage (V
id
= 1V) R
L
= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
R
L
= 10kΩ
R
L
= 600Ω
9.95
9.85
9
9.8
8.8
9.95
9.35
7.8
V
V
OL
Low Level Output Voltage (V
id
= -1V) R
L
= 100kΩ
R
L
= 10kΩ
R
L
= 600Ω
R
L
= 100Ω
T
min.
≤ T
amb
≤ T
max.
R
L
= 10kΩ
R
L
= 600Ω
50
650
2300
50
150
800
150
900
mV
I
o
Output Short Circuit Current (V
id
= ±1V) Source (V
o
=V
CC
−
)
Sink (V
o
=V
CC
+
)
45
50
65
75
mA
GBP Gain Bandwidth Product
(A
VCL
= 100, R
L
= 10kΩ,C
L
= 100pF, f = 100kHz) 1.4
MHz
SR
+
Slew Rate (A
VCL
=1,R
L
= 10kΩ,C
L
= 100pF, V
i
= 2.5V to 7.5V) 1.3 V/µs
SR
-
Slew Rate (A
VCL
=1,R
L
= 10kΩ,C
L
= 100pF, V
i
= 2.5V to 7.5V) 0.8 V/µs
∅m Phase Margin 40 Degrees
e
n
Equivalent Input Noise Voltage (R
s
= 100Ω, f = 1kHz) 30
nV
√Hz
THD Total Harmonic Distortion
(A
VCL
=1,R
L
= 10kΩ,C
L
= 100pF, V
O
= 4.75V to 5.25V, f = 1kHz) 0.024
%
C
in
Input Capacitance 1.5 pF
Note 1 : Maximum values including unavoidable inaccuracies of the industrial test.
TS912
5/12