Datasheet

Table Of Contents
TS912, TS912A, TS912B Electrical characteristics
Doc ID 2325 Rev 7 9/21
Table 5. V
CC+
= 10 V, V
CC-
= 0 V, R
L
, C
L
connected to V
CC
/2, T
amb
= 25 °C
(unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V
io
Input offset voltage (V
ic
= V
o
= V
CC
/2)
TS912
TS912A
TS912B
T
min
T
amb
T
max
TS912
TS912A
TS912B
10
5
2
12
7
3
mV
ΔV
io
Input offset voltage drift 5 μV/°C
I
io
Input offset current
(1)
T
min
T
amb
T
max
1 100
200
pA
I
ib
Input bias current
(1)
T
min
T
amb
T
max
1 150
300
pA
I
CC
Supply current (per amplifier, A
VCL
= 1, no load)
T
min
T
amb
T
max
400 600
700
μA
CMR
Common mode rejection ratio
V
ic
= 3 to 7 V, V
o
= 5 V
V
ic
= 0 to 10 V, V
o
= 5 V
60
50
90
75
dB
SVR Supply voltage rejection ratio (V
CC+
= 5 to 10 V, V
o
= V
CC
/2) 60 90 dB
A
vd
Large signal voltage gain (R
L
= 10 kΩ, V
o
= 2.5 V to 7.5 V)
T
min
T
amb
T
max
15
10
50
V/mV
V
OH
High level output voltage (V
id
= 1V)
R
L
= 100 kΩ
R
L
= 10 kΩ
R
L
= 600 Ω
R
L
= 100 Ω
T
min
T
amb
T
max
R
L
= 10 kΩ
R
L
= 600 Ω
9.95
9.85
9
9.8
8.8
9.95
9.35
7.8
V
V
OL
Low level output voltage (V
id
= -1 V)
R
L
= 100 kΩ
R
L
= 10 kΩ
R
L
= 600 Ω
R
L
= 100 Ω
T
min
T
amb
T
max
R
L
= 10 kΩ
R
L
= 600 Ω
50
650
2300
50
150
800
150
900
mV
I
o
Output short-circuit current (V
id
= ±1 V)
Source (V
o
= V
CC-
)
Sink (V
o
= V
CC+
)
45
50
65
75
mA
GBP
Gain bandwidth product
(A
VCL
= 100, R
L
= 10 kΩ, C
L
= 100 pF, f = 100 kHz)
1.4 MHz