Datasheet

TS912, TS912A, TS912B Electrical characteristics
Doc ID 2325 Rev 7 7/21
Table 4. V
CC+
= 5 V, V
CC-
= 0 V, R
L
, C
L
connected to V
CC
/2, T
amb
= 25 °C
(unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
V
io
Input offset voltage (V
ic
= V
o
= V
CC
/2)
TS912
TS912A
TS912B
T
min
≤ T
amb
≤ T
max
TS912
TS912A
TS912B
10
5
2
12
7
3
mV
ΔV
io
Input offset voltage drift 5 μV/°C
I
io
Input offset current
(1)
T
min
≤ T
amb
≤ T
max
1 100
200
pA
I
ib
Input bias current
(1)
T
min
≤ T
amb
≤ T
max
1 150
300
pA
I
CC
Supply current (per amplifier, A
VCL
= 1, no load)
T
min
≤ T
amb
≤ T
max
230 350
450
μA
CMR
Common mode rejection ratio
V
ic
= 1.5 to 3.5 V, V
o
= 2.5 V
60 85 dB
SVR Supply voltage rejection ratio (V
CC+
= 3 to 5 V, V
o
= V
CC
/2) 55 80 dB
A
vd
Large signal voltage gain (R
L
= 10 kΩ, V
o
= 1.5 V to 3.5 V)
T
min
≤ T
amb
≤ T
max
10
7
40
V/mV
V
OH
High level output voltage (V
id
= 1 V)
R
L
= 100 kΩ
R
L
= 10 kΩ
R
L
= 600 Ω
R
L
= 100 Ω
T
min
≤ T
amb
≤ T
max
R
L
= 10 kΩ
R
L
= 600 Ω
4.95
4.9
4.25
4.8
4.1
4.95
4.55
3.7
V
V
OL
Low level output voltage (V
id
= -1 V)
R
L
= 100 kΩ
R
L
= 10 kΩ
R
L
= 600 Ω
R
L
= 100 Ω
T
min
≤ T
amb
≤ T
max
R
L
= 10 kΩ
R
L
= 600 Ω
40
350
1400
50
100
500
150
750
mV
I
o
Output short-circuit current (V
id
= ±1 V)
Source (V
o
= V
CC-
)
Sink (V
o
= V
CC+
)
45
45
65
65
mA
GBP
Gain bandwidth product
(A
VCL
= 100, R
L
= 10 kΩ, C
L
= 100 pF, f = 100 kHz)
1MHz
SR
+
Slew rate (A
VCL
= 1, R
L
= 10 kΩ, C
L
= 100 pF, V
i
= 1 V to 4 V) 0.8 V/μs
SR
-
Slew rate (A
VCL
= 1, R
L
= 10 kΩ, C
L
= 100 pF, V
i
= 1 V to 4 V) 0.6 V/μs