Datasheet

Electrical characteristics TS881
6/21 DocID023340 Rev 2
2 Electrical characteristics
Table 3. V
CC
=+0.9V, T
amb
= +25 °C, V
ICM
= 0 V (unless otherwise specified)
(1)
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
IO
Input offset voltage
(2)
-40 °C < T
amb
< +85 °C
-10
-12
110
12
mV
V
IO
Input offset voltage drift -40 °C < T
amb
< +85 °C 4.6 V/°C
V
HYST
Input hysteresis voltage
(3)
-40 °C < T
amb
< +85 °C 1.0
2.4
4.2
mV
I
IO
Input offset current
(4)
-40 °C < T
amb
< +85 °C
-10
-100
10
100
pA
I
IB
Input bias current
(4)
-40 °C < T
amb
< +85 °C
-10
-100
10
100
pA
I
CC
Supply current per operator
No load, output low, V
ID
=-0.1 V
-40 °C < T
amb
< +85 °C
No load, output high, V
ID
=+0.1 V
-40 °C < T
amb
< +85 °C
300
260
400
450
350
400
nA
I
SC
Short-circuit current
Source
Sink
0.2
0.4
mA
V
OH
Output voltage high
I
source
=50A
-40 °C < T
amb
< +85 °C
0.85
0.83
0.87
V
V
OL
Output voltage low
I
sink
=50A
-40 °C < T
amb
< +85 °C
20 50
70
mV
T
PLH
Propagation delay
(low to high)
f=1kHz,C
L
=30pF,R
L
=1M
Overdrive = 10 mV
-40 °C < T
amb
< +85 °C
Overdrive = 100 mV
-40 °C < T
amb
< +85 °C
7.2
3.3
14
16
5.0
5.5
s
T
PHL
Propagation delay
(high to low)
f=1kHz,C
L
=30pF,R
L
=1M
Overdrive = 10 mV
-40 °C < T
amb
< +85 °C
Overdrive = 100 mV
-40 °C < T
amb
< +85 °C
6.0
2.5
11
12
4.5
5.0
s
T
R
Rise time (10% to 90%) C
L
=30pF, R
L
=1M 160 ns
T
F
Fall time (90% to 10%) C
L
=30pF, R
L
=1M 140 ns
T
ON
Power-up time 1.1 1.7 ms
1. All values over the temperature range are guaranteed through correlation and simulation. No production test is performed
at the temperature range limits.
2. The offset is defined as the average value of positive and negative trip points (input voltage differences requested to
change the output state in each direction).
3. The hysteresis is a built-in feature of the TS881 device. It is defined as the voltage difference between the trip points.
4. Maximum values are guaranteed by design.