Datasheet

Electrical characteristics TS512, TS512A
4/18 Doc ID 4948 Rev 5
3 Electrical characteristics
Table 3. V
CC
= ±15 V, T
amb
= 25 °C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Unit
I
CC
Supply current (per operator)
T
min
≤ T
amb
≤ T
max
0.5 0.6
0.75
mA
I
ib
Input bias current
T
min
≤ T
amb
≤ T
max
50 150
300
nA
R
in
Input resistance, f = 1 kHz 1 MΩ
V
io
Input offset voltage
TS512
TS512A
T
min
≤ T
amb
≤ T
max
TS512
TS512A
0.5 2.5
0.5
3.5
1.5
mV
ΔV
io
Input offset voltage drift
T
min
≤ T
amb
≤ T
max
2µV/°C
I
io
Input offset current
T
min
≤ T
amb
≤ T
max
520
40
nA
ΔI
io
Input offset current drift
T
min
≤ T
amb
≤ T
max
0.08
I
os
Output short-circuit current 23 mA
A
vd
Large signal voltage gain
R
L
= 2 kΩ, V
CC
= ±15 V, T
min
≤ T
amb
≤ T
max
V
CC
= ± 4 V
90
100
95
dB
GBP Gain bandwidth product, f = 100 kHz 1.8 3 MHz
e
n
Equivalent input noise voltage, f = 1 kHz
Rs = 50 Ω
Rs = 1 kΩ
Rs = 10 kΩ
8
10
18
THD
Total harmonic distortion
A
v
= 20 dB, R
L
= 2 kΩ
V
o
= 2 V
pp
, f = 1 kHz
0.03
%
±V
opp
Output voltage swing
R
L
= 2 kΩ, V
CC
= ±15 V, T
min
≤ T
amb
≤ T
max
V
CC
= ± 4 V
±13
±3
V
V
opp
Large signal voltage swing
R
L
= 10 kΩ, f = 10 kHz
28 V
pp
SR
Slew rate
Unity gain, R
L
= 2 kΩ
0.8 1.5 V/µs
CMR
Common mode rejection ratio
CMR = 20 log (ΔV
ic
/ΔV
io
)
(V
ic
= -10 V to 10 V, V
out
= V
CC
/2, R
L
> 1 MΩ)
90 dB
nA
° C
--------
nV
Hz
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