Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsLinear ICsLinear IC - Audio amplifier 1-channel (mono) Class AB MiniSO 8

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■ OPERATING FROM Vcc=2V to 5.5V

■ STANDBY MODE ACTIVE HIGH (TS419) or

LOW (TS421)

■ OUTPUT POWER into 16Ω: 367mW @ 5V

with 10% THD+N max or 295mW @5V and

110mW @3.3V with 1% THD+N max.

■ LOW CURRENT CONSUMPTION: 2.5mA max

■ High Signal-to-Noise ratio: 95dB(A) at 5V

■ PSRR: 56dB typ. at 1kHz, 46dB at 217Hz

■ SHORT CIRCUIT LIMITATION

■ ON/OFF click reduction circuitry

■ Available in SO8, MiniSO8 & DFN 3x3

DESCRIPTION

The TS419/TS421 is a monaural audio power am-

plifier driving in BTL mode a 16 or 32Ω earpiece or

receiver speaker. The main advantage of this con-

figuration is to get rid of bulky ouput capacitors.

Capable of descending to low voltages, it delivers

up to 220mW per channel (into 16Ω loads) of con-

tinuous average power with 0.2% THD+N in the

audio bandwidth from a 5V power supply.

An externally controlled standby mode reduces

the supply current to 10nA (typ.). The TS419/

TS421 can be configured by external gain-setting

resistors or used in a fixed gain version.

APPLICATIONS

■ 16/32 ohms earpiece or receiver speaker driver

■ Mobile and cordless phones (analog / digital)

■ PDAs & computers

■ Portable appliances

ORDER CODE

MiniSO & DFN only available in Tape & Reel with T suffix.

SO is available in Tube (D) and in Tape & Reel (DT)

PIN CONNECTIONS (top view)

Part

Number

Temp.

Range:

Package

Gain Marking

DS Q

TS419

-40, +85°C

•

external TS419I

TS421

•

external TS421I

TS419

••

external K19A

TS419-2 tba tba x2/6dB K19B

TS419-4 tba tba x4/12dB K19C

TS419-8 tba tba x8/18dB K19D

TS421

••

external K21A

TS421-2 tba tba x2/6dB K21B

TS421-4 tba tba x4/12dB K21C

TS421-8 tba tba x8/18dB K21D

TS419IDT: SO8

TS419IST, TS419-xIST: MiniSO8

Standby

Bypass

V+

IN-

OUT

GND

OUT1

TS421IDT: SO8

TS421IST, TS421-xIST: MiniSO8

TS419IQT, TS419-xIQT: DFN8

TS421IQT, TS421-xIQT: DFN8

STANDBY

BYPASS V

IN+

Vcc

OUT 1

GND

VIN-

VOUT 2

STANDBY

BYPASS V

IN+

Vcc

OUT 1

GND

VIN-

VOUT 2

STANDBY

BYPASS V

IN+

Vcc

OUT 1

GND

VIN-

VOUT 2

STANDBY

BYPASS V

IN+

Vcc

OUT 1

GND

VIN-

VOUT 2

TS419

TS421

360mW MONO AMPLIFIER WITH STANDBY MODE

June 2003

Summary of content (32 pages)

PAGE 1
TS419 TS421 360mW MONO AMPLIFIER WITH STANDBY MODE ■ OPERATING FROM Vcc=2V to 5.5V ■ STANDBY MODE ACTIVE HIGH (TS419) or LOW (TS421) ■ OUTPUT POWER into 16Ω: 367mW @ 5V with 10% THD+N max or 295mW @5V and 110mW @3.3V with 1% THD+N max. ■ LOW CURRENT CONSUMPTION: 2.5mA max ■ High Signal-to-Noise ratio: 95dB(A) at 5V ■ PSRR: 56dB typ.
PAGE 2
TS419-TS421 ABSOLUTE MAXIMUM RATINGS Symbol VCC Vi Tstg Tj Rthja Pd Parameter Supply voltage 1) Value Unit 6 V -0.3V to VCC +0.3V V -65 to +150 °C Maximum Junction Temperature 150 °C Thermal Resistance Junction to Ambient SO8 MiniSO8 DFN8 175 215 70 Power Dissipation 2) SO8 MiniSO8 DFN8 0.71 0.58 1.
PAGE 3
TS419-TS421 FIXED GAIN VERSION SPECIFIC ELECTRICAL CHARACTERISTICS VCC from +5V to +2V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol RIN G Parameter Min. Typ. Input Resistance 20 Gain value for Gain TS419/TS421-2 6dB Gain value for Gain TS419/TS421-4 12dB Gain value for Gain TS419/TS421-8 18dB Max. Unit kΩ dB APPLICATION COMPONENTS INFORMATION Components Functional Description RIN Inverting input resistor which sets the closed loop gain in conjunction with RFEED.
PAGE 4
TS419-TS421 ELECTRICAL CHARACTERISTICS VCC = +5V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Typ. Max. Unit 1.8 2.5 mA Standby Current No input signal, VSTANDBY=GND for TS421 No input signal, VSTANDBY=Vcc for TS419 10 1000 nA Voo Output Offset Voltage No input signal, RL = 16 or 32Ω, Rfeed=20kΩ 5 25 mV PO Output Power THD+N THD+N THD+N THD+N THD+N THD+N ICC ISTANDBY THD + N PSRR SNR Parameter Min. Supply Current No input signal, no load = = = = = = 0.
PAGE 5
TS419-TS421 ELECTRICAL CHARACTERISTICS VCC = +3.3V, GND = 0V, Tamb = 25°C (unless otherwise specified) 1) Symbol Typ. Max. Unit 1.8 2.5 mA Standby Current No input signal, VSTANDBY=GND for TS421 No input signal, VSTANDBY=Vcc for TS419 10 1000 nA Voo Output Offset Voltage No input signal, RL = 16 or 32Ω, Rfeed=20kΩ 5 25 mV PO Output Power THD+N THD+N THD+N THD+N THD+N THD+N ICC ISTANDBY THD + N PSRR SNR Min. Supply Current No input signal, no load = = = = = = 0.
PAGE 6
TS419-TS421 ELECTRICAL CHARACTERISTICS VCC = +2.5V, GND = 0V, Tamb = 25°C (unless otherwise specified)1) Symbol ICC ISTANDBY Parameter Supply Current No input signal, no load Standby Current No input signal, No input signal, VSTANDBY=GND for TS421 VSTANDBY=Vcc for TS419 Voo Output Offset Voltage No input signal, RL = 16 or 32Ω, Rfeed=20kΩ PO Output Power THD+N THD+N THD+N THD+N THD+N THD+N THD + N PSRR SNR Min. = = = = = = 0.
PAGE 7
TS419-TS421 ELECTRICAL CHARACTERISTICS VCC = +2V, GND = 0V, Tamb = 25°C (unless otherwise specified) Symbol Typ. Max. Unit 1.7 2.5 mA Standby Current No input signal, VSTANDBY=GND for TS421 No input signal, VSTANDBY=Vcc for TS419 10 1000 nA Voo Output Offset Voltage No input signal, RL = 16 or 32Ω, Rfeed=20kΩ 5 25 mV PO Output Power THD+N THD+N THD+N THD+N THD+N THD+N ICC ISTANDBY THD + N PSRR SNR Parameter Min. Supply Current No input signal, no load = = = = = = 0.
PAGE 8
TS419-TS421 Index of Graphs Description Figure Page 1 to 12 9 to 10 13 11 Current Consumption vs Standby Voltage 14 to 19 11 to 12 Output Power vs Power Supply Voltage 20 to 23 12 Output Power vs Load Resistor 24 to 27 12 to 13 Power Dissipation vs Output Power 28 to 31 13 to 14 Power Derating vs Ambiant Temperature 32 14 Output Voltage Swing vs Supply Voltage 33 14 Low Frequency Cut Off vs Input Capacitor 34 14 THD + N vs Output Power 35 to 43 15 to 16 THD + N vs Frequency 4
PAGE 9
TS419-TS421 Fig. 1: Open Loop Gain and Phase vs Frequency Fig. 2: Open Loop Gain and Phase vs Frequency 180 Gain 60 100 Phase 80 20 60 0 40 100 Phase 80 20 60 0 40 20 -20 40 20 -20 0 -40 0.1 1 10 100 Frequency (kHz) 1000 0 -20 10000 -40 0.1 Fig. 3: Open Loop Gain and Phase vs Frequency 1 10 100 Frequency (kHz) 1000 -20 10000 Fig.
PAGE 10
TS419-TS421 Fig. 7: Open Loop Gain and Phase vs Frequency Fig. 8: Open Loop Gain and Phase vs Frequency 180 Gain 60 100 Phase 80 20 60 0 40 100 Phase 80 20 60 0 40 20 -20 40 20 -20 0 -40 0.1 1 10 100 Frequency (kHz) 1000 0 -20 10000 -40 0.1 Fig. 9: Open Loop Gain and Phase vs Frequency 1 10 100 Frequency (kHz) 1000 -20 10000 Fig.
PAGE 11
TS419-TS421 Fig. 13: Current Consumption vs Power Supply Voltage Fig. 14: Current Consumption vs Standby Voltage 2.0 2.0 Ta=85°C Current Consumption (mA) Current Consumption (mA) No load 1.5 Ta=25°C Ta=-40°C 1.0 0.5 0.0 0 1 2 3 4 1.5 Ta=85°C Ta=25°C 1.0 Ta=-40°C 0.5 TS419 Vcc = 5V No load 0.0 5 0 1 Power Supply Voltage (V) 2 3 4 5 Standby Voltage (V) Fig. 15: Current Consumption vs Standby Voltage Fig. 16: Current Consumption vs Standby Voltage 2.0 2.
PAGE 12
TS419-TS421 Fig. 19: Current Consumption vs Standby Voltage Fig. 20: Output Power vs Power Supply Voltage 2.0 550 RL = 8Ω F = 1kHz BW < 125kHz Tamb = 25°C 500 450 1.5 Output power (mW) Current Consumption (mA) Ta=85°C Ta=25°C 1.0 Ta=-40°C 0.5 TS421 Vcc = 2V No load 0.0 0 1 400 THD+N=1% 350 THD+N=10% 300 250 200 150 THD+N=0.1% 100 50 0 2.0 2 2.5 3.0 3.5 4.0 Vcc (V) Standby Voltage (V) Fig.
PAGE 13
TS419-TS421 Fig. 25: Output Power vs Load Resistor Fig. 26: Output Power vs Load Resistor 100 200 Output power (mW) 150 THD+N=1% 100 50 Vcc = 2.5V F = 1kHz BW < 125kHz Tamb = 25°C 90 THD+N=1% 80 Output power (mW) Vcc = 3.3V F = 1kHz BW < 125kHz Tamb = 25°C THD+N=10% THD+N=0.1% 70 THD+N=10% 60 50 40 30 20 THD+N=0.1% 10 0 0 8 16 24 32 40 48 Load Resistance ( ) 56 64 Fig.
PAGE 14
TS419-TS421 Fig. 31: Power Dissipation vs Output Power Fig. 32: Power Derating Curves Power Dissipation (mW) 100 Vcc=2V F=1kHz 80 THD+N<1% RL=8Ω 60 40 RL=16Ω 20 RL=32Ω 0 0 5 10 15 20 25 Output Power (mW) 30 35 Fig. 33: Output Voltage Swing For One Amp. vs Power Supply Voltage VOH & VOL for Vs1 and Vs2 (V) 5.0 4.5 Tamb=25°C Amps. in BTL Ω 4.0 3.5 Ω 3.0 2.5 RL=8Ω 2.0 RL=16Ω 1.5 RL=32Ω Ω 1.0 0.5 0.0 2.0 14/32 Fig.
PAGE 15
TS419-TS421 Fig. 35: THD + N vs Output Power Fig. 36: THD + N vs Output Power 10 10 RL = 16Ω F = 20Hz Av = 2 1 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) THD + N (%) RL = 8Ω F = 20Hz 1 Av = 2 Cb = 1µF BW < 22kHz Tamb = 25°C 0.1 Vcc=2V Vcc=2.5V 0.1 0.01 Vcc=2V Vcc=2.5V 0.01 Vcc=3.3V Vcc=3.3V Vcc=5V 1E-3 1 1E-3 10 100 Output Power (mW) Fig. 37: THD + N vs Output Power 10 100 Output Power (mW) Fig.
PAGE 16
TS419-TS421 Fig. 41: THD + N vs Output Power Fig. 42: THD + N vs Output Power 10 RL = 8Ω F = 20kHz Av = 2 Cb = 1µF BW < 125kHz Tamb = 25°C THD + N (%) THD + N (%) 10 Vcc=2V 1 Vcc=2.5V RL = 16Ω F = 20kHz Av = 2 Cb = 1µF BW < 125kHz 1 Tamb = 25°C Vcc=2V Vcc=2.5V 0.1 Vcc=3.3V 0.1 1 Vcc=3.3V Vcc=5V 10 100 Output Power (mW) 1 Fig. 43: THD + N vs Output Power Vcc=2V RL=8Ω Av=2 Cb = 1µF Bw < 125kHz 0.1 Tamb = 25°C THD + N (%) THD + N (%) 10 100 Output Power (mW) Fig.
PAGE 17
TS419-TS421 Fig. 47: Signal to Noise Ratio vs Power Supply Voltage with Unweighted Filter (20Hz to 20kHz) Fig. 48: Signal to Noise Ratio vs Power Supply Voltage with Weighted Filter Type A 95 105 Av = 2 Cb = 1µF THD+N < 0.5% Tamb = 25°C Signal to Noise Ratio (dB) Signal to Noise Ratio (dB) 100 RL=32Ω 90 85 RL=8Ω 80 RL=16Ω 75 70 2.0 2.5 3.0 3.5 4.0 4.5 Av = 2 Cb = 1µF 100 THD+N < 0.5% Tamb = 25°C 95 90 RL=8Ω RL=16Ω 85 80 2.0 5.0 2.
PAGE 18
TS419-TS421 Fig. 53: PSRR vs Bypass Capacitor Fig. 54: PSRR vs Bypass Capacitor 0 0 Vripple = 200mVpp Av = 2 Input = Grounded Cb = Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) -20 -30 -40 -10 -20 PSRR (dB) -10 Vcc = 2V -50 -30 -40 -60 Vcc = 5V, 3.3V & 2.5V 100 Vcc = 5V, 3.3V & 2.5V 1000 10000 Frequency (Hz) 100000 Fig. 55: PSRR vs Bypass Capacitor 0 -10 PSRR (dB) -20 -30 Vripple = 200mVpp Av = 2 Input = Grounded Cb = 10µF Cin = 1µF RL >= 16Ω Tamb = 25°C -40 Vcc = 2V -50 -60 Vcc = 5V, 3.
PAGE 19
TS419-TS421 Fig. 56: THD + N vs Output Power Fig. 57: THD + N vs Output Power 10 RL = 8Ω F = 20Hz Av = 4 1 Cb = 1µF BW < 22kHz Tamb = 25°C RL = 16Ω F = 20Hz Av = 4 1 Cb = 1µF BW < 22kHz Tamb = 25°C THD + N (%) THD + N (%) 10 Vcc=2V 0.1 Vcc=2.5V Vcc=2V Vcc=2.5V 0.1 0.01 0.01 Vcc=3.3V Vcc=3.3V 1 1E-3 10 100 Output Power (mW) Fig. 58: THD + N vs Output Power 1 10 100 Output Power (mW) Fig.
PAGE 20
TS419-TS421 Fig. 62: THD + N vs Output Power Fig. 63: THD + N vs Output Power 10 RL = 8Ω F = 20kHz Av = 4 Cb = 1µF BW < 125kHz Tamb = 25°C 1 THD + N (%) THD + N (%) 10 Vcc=2V Vcc=2.5V Vcc=3.3V 1 RL = 16Ω F = 20kHz Av = 4 Cb = 1µF BW < 125kHz Tamb = 25°C 1 Vcc=3.3V 0.1 Fig. 64: THD + N vs Output Power 1 0.1 THD + N (%) Vcc=2V Vcc=2.5V RL=8Ω Av=4 Cb = 1µF Bw < 125kHz Tamb = 25°C Vcc=2V, Po=28mW 0.1 Vcc=3.3V 1 10 Output Power (mW) Vcc=5V Vcc=5V, Po=300mW 0.01 20 100 Fig.
PAGE 21
TS419-TS421 Fig. 68: Signal to Noise Ratio vs Power Supply Voltage with Unweighted Filter (20Hz to 20kHz) Fig. 69: Signal to Noise Ratio vs Power Supply Voltage with Weighted Filter Type A 100 Av = 4 Cb = 1µF THD+N < 0.5% 85 Tamb = 25°C RL=32Ω Signal to Noise Ratio (dB) Signal to Noise Ratio (dB) 90 80 RL=8Ω 75 RL=16Ω 70 2.0 2.5 3.0 3.5 4.0 4.5 Av = 4 Cb = 1µF 95 THD+N < 0.5% Tamb = 25°C 90 RL=8Ω 85 RL=16Ω 80 75 2.0 5.0 2.
PAGE 22
TS419-TS421 Fig. 74: PSRR vs Bypass Capacitor Fig. 75: PSRR vs Bypass Capacitor 0 0 Vripple = 200mVpp Av = 4 Input = Grounded Cb = Cin = 1µF RL >= 16Ω Tamb = 25°C PSRR (dB) -20 -30 -10 -20 PSRR (dB) -10 Vcc = 2V -40 -50 -60 -60 Vcc = 5V, 3.3V & 2.5V 1000 10000 Frequency (Hz) 100000 Fig. 76: PSRR vs Bypass Capacitor 0 PSRR (dB) -20 -30 Vripple = 200mVpp Av = 4 Input = Grounded Cb = 10µF Cin = 1µF RL >= 16Ω Tamb = 25°C Vcc = 2V -40 -50 -60 Vcc = 5V, 3.3V & 2.
PAGE 23
TS419-TS421 Fig. 77: THD + N vs Output Power Fig. 78: THD + N vs Output Power 10 RL = 8Ω F = 20Hz Av = 8 1 Cb = 1µF BW < 22kHz Tamb = 25°C 0.1 THD + N (%) THD + N (%) 10 Vcc=2V Vcc=2.5V Vcc=3.3V 0.01 1 Vcc=3.3V 1 Vcc=5V 10 100 Output Power (mW) Fig. 80: THD + N vs Output Power 10 RL = 32Ω F = 20Hz Av = 8 Cb = 1µF 1 BW < 22kHz Tamb = 25°C RL = 8Ω F = 1kHz Av = 8 Cb = 1µF 1 BW < 125kHz Tamb = 25°C THD + N (%) THD + N (%) 0.1 10 100 Output Power (mW) 10 Vcc=2V Vcc=2V Vcc=2.5V 0.1 0.
PAGE 24
TS419-TS421 Fig. 83: THD + N vs Output Power Fig. 84: THD + N vs Output Power 10 10 THD + N (%) THD + N (%) RL = 8Ω, F = 20kHz Av = 8, Cb = 1µF BW < 125kHz, Tamb = 25°C Vcc=2V Vcc=2.5V 1 Vcc=3.3V 1 RL = 16Ω F = 20kHz Av = 8 Cb = 1µF BW < 125kHz Tamb = 25°C Vcc=2V Vcc=2.5V 1 Vcc=5V Vcc=3.3V 10 100 Output Power (mW) 1 Fig. 85: THD + N vs Output Power Vcc=5V 10 100 Output Power (mW) Fig.
PAGE 25
TS419-TS421 Fig. 89: Signal to Noise Ratio vs Power Supply Voltage with Unweighted Filter (20Hz to 20kHz) Fig. 90: Signal to Noise Ratio vs Power Supply Voltage with Weighted Filter Type A 95 Av = 8 Cb = 1µF 85 THD+N < 0.5% Tamb = 25°C 80 RL=32Ω Signal to Noise Ratio (dB) Signal to Noise Ratio (dB) 90 75 RL=8Ω 70 RL=16Ω 65 60 2.0 2.5 3.0 3.5 4.0 4.5 Av = 8 Cb = 1µF 90 THD+N < 0.5% Tamb = 25°C 85 80 RL=8Ω RL=16Ω 75 70 2.0 5.0 2.5 3.
PAGE 26
TS419-TS421 Fig. 95: PSRR vs Bypass Capacitor Fig. 96: PSRR vs Bypass Capacitor 0 0 Vripple = 200mVpp Av = 8 Input = Grounded Cb = Cin = 1µF RL >= 16Ω Tamb = 25°C -20 -10 PSRR (dB) PSRR (dB) -10 -30 Vcc = 2V -20 -30 Vripple = 200mVpp Av = 8 Input = Grounded Cb = 4.7µF Cin = 1µF RL >= 16Ω Tamb = 25°C Vcc = 2V -40 -40 -50 -50 Vcc = 5V, 3.3V & 2.5V 100 Vcc = 5V, 3.3V & 2.5V 1000 10000 Frequency (Hz) 100000 Fig.
PAGE 27
TS419-TS421 APPLICATION INFORMATION ■ BTL Configuration Principle The TS419 & TS420 are monolithic power amplifiers with a BTL output type. BTL (Bridge Tied Load) means that each end of the load is connected to two single-ended output amplifiers. Thus, we have: Single ended output 1 = Vout1 = Vout (V) Single ended output 2 = Vout2 = -Vout (V) And Vout1 - Vout2 = 2Vout (V) In the high frequency region, you can limit the bandwidth by adding a capacitor (Cfeed) in parallel with Rfeed.
PAGE 28
TS419-TS421 The efficiency is the ratio between the output power and the power supply η= π VPEAK POUT = P sup ply 4 Vcc The maximum theoretical value is reached when Vpeak = Vcc, so π = 78.5% 4 ■ Decoupling of the circuit Two capacitors are needed to bypass properly the TS419/TS421. A power supply bypass capacitor CS and a bias voltage bypass capacitor C B. CS has particular influence on the THD+N in the high frequency region (above 7kHz) and an indirect influence on power supply disturbances.
PAGE 29
TS419-TS421 Fig. 98 : Differential Input Amplifier Configuration Note : This formula is true only if: 1 FCB = (Hz ) 942000 × C B is ten times lower than FL. The following bill of material is an example of a differential amplifier with a gain of 2 and a -3dB lower cuttoff frequency of about 80Hz. Components : Designator Input capacitance C can be calculated by the following formula using the -3dB lower frequency required.
PAGE 30
TS419-TS421 PACKAGE MECHANICAL DATA SO-8 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 1.35 1.75 0.053 0.069 A1 0.10 0.25 0.04 0.010 A2 1.10 1.65 0.043 0.065 B 0.33 0.51 0.013 0.020 C 0.19 0.25 0.007 0.010 D 4.80 5.00 0.189 0.197 E 3.80 4.00 0.150 0.157 e 1.27 0.050 H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.40 1.27 0.016 0.050 k ddd 8˚ (max.) 0.1 0.
PAGE 31
TS419-TS421 PACKAGE MECHANICAL DATA 31/32
PAGE 32
TS419-TS421 PACKAGE MECHANICAL DATA Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice.