Datasheet

TMMDB3TG
3/4
10mA
I
BO
I
R
-V + V
+I
F
-I
F
0,5 V
BO
V
BO
V
V
F
Diagram 1: Voltage - current characteristic curve.
D.U.T
Vo
C=0.1µF
220 V
50 Hz
500 k10 k
R=20
I
P
Rs=0
T410
Diagram 2: Test circuit.
90 %
l
p
10 %
t
r
Diagram 3: Rise time measurement.
25 50 75 100 125
1.08
1.06
1.04
1.02
1.00
VBO [Tj]
VBO [Tj = 25°C]
Tj (°C)
Fig. 1: Relative variation of VBO versus junction
temperature (typical values)
1 10 100
0.1
1.0
10.0
20.0
tp(µs)
ITRM(A)
F=120Hz
Tj initial=25°C
Fig. 2: Repetitive peak pulse current versus pulse
duration (maximum values).