Datasheet

TL084, TL084A, TL084B Electrical characteristics
Doc ID 2301 Rev 5 7/19
t
r
Rise time
V
in
= 20 mV, R
L
= 2 kΩ, C
L
= 100 pF, unity gain
0.1 0.1 μs
K
ov
Overshoot
V
in
= 20 mV, R
L
= 2 kΩ, C
L
= 100 pF, unity gain
10 10 %
GBP
Gain bandwidth product
V
in
= 10 mV, R
L
= 2 kΩ, C
L
= 100 pF, F= 100 kHz
2.54 2.54 MHz
R
i
Input resistance 10
12
10
12
Ω
THD
Total harmonic distortion
F= 1 kHz, R
L
= 2 kΩ,C
L
= 100 pF, A
v
= 20 dB,
V
o
= 2 V
pp
)
0.01 0.01 %
e
n
Equivalent input noise voltage
R
S
= 100 Ω, F= 1 kHz
15 15
∅m Phase margin 45 45
degree
s
V
o1
/V
o2
Channel separation
A
v
= 100
120 120 dB
1. The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction
temperature.
Table 3. V
CC
= ±15 V, T
amb
= +25 °C (unless otherwise specified) (continued)
Symbol Parameter
TL084I/AI/AC/BI/BC TL084C
Unit
Min. Typ. Max. Min. Typ. Max.
nV
Hz
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