Datasheet

P010xx Characteristics
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Figure 5. Average and DC on-state current
vs. case temperature P010xxL
Figure 6. Relative variation of thermal
impedance junction to ambient
vs. pulse duration
0 25 50 75 100 125
0.00
0.05
0.10
0.15
0.20
0.25
0.30
I (A)
T(AV)
T (°C)
case
α
= 180°
D.C.
1E-2 1E-1
1E+0
1E+1 1E+2
5E+2
0.01
0.10
1.00
K=[Z /R
th(j-a) th(j-a)
]
t (s)
p
SOT-223
TO-92
SOT23-3L
Figure 7. Relative variation of gate trigger,
holding, and latching currents
vs. junction temperature
Figure 8. Relative variation of holding
current vs. gate-cathode resistance
-40 -20 0 20 40 60 80 100 120 140
0
1
2
3
4
5
6
T (°C)
j
I,I,I[T] /
GT H L j
I ,I ,I [T =25°C]
GT H L j
I
GT
I
H
& I
R = 1k
L
GK
Ω
Typical values
1E-2 1E-1 1E+0 1E+
1
0
2
4
6
8
10
12
14
16
18
20
R(k)
GK
Ω
I [R ] / I [ =1k ]
HGK H
ΩR
GK
T
j
= 25°C
Typical values
Figure 9. Relative variation of dV/dt immunity
vs. gate-cathode resistance
Figure 10. Relative variation of dV/dt immunity
vs. gate-cathode capacitance
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1.0
10.0
R(k)
GK
Ω
dV/dt[R ] / dV/dt[ =1k ]
GK
ΩR
GK
T
j
= 125°C
V = 0.67 x V
D DRM
Typical values
01234567
0
2
4
6
8
10
C (nF)
GK
dV/dt[C ] / dV/dt[ =1k ]
GK
Ω
R
GK
T
V = 0.67 x V
= 125°C
R = 1k
D DRM
GK
j
Ω
Typical values