Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsThyristors & TriacsTYN 825 Thyristor

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X04 Series

SENSITIVE 4A SCRS

September 2000 - Ed: 3

MAIN FEATURES:

DESCRIPTION

Thanks to highly sensitive triggering levels, the

X04 SCR series is suitable for all applications

where the available gate current is limited, such as

capacitive discharge ignitions, motor control in

kitchen aids, overvoltage crowbar protection in low

power supplies...

Symbol Value Unit

T(RMS)

DRM

RRM

600 and 800 V

50 to 200 µA

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

T(RMS)

RMS on-state current (180° conduction angle) Tl = 60°C 4 A

Tamb = 25°C 1.35

(AV)

Average on-state current (180° conduction angle) Tl = 60°C 2.5 A

Tamb = 25°C 0.9

TSM

Non repetitive surge peak on-state

current

tp = 8.3 ms

Tj = 25°C

33 A

tp = 10 ms 30

t Value for fusing

tp = 10 ms Tj = 25°C 4.5

dI/dt

Critical rate of rise of on-state current

=2xI

,tr≤100ns

F = 60 Hz Tj = 125°C 50 A/µs

Peak gate current tp = 20 µs Tj = 125°C 1.2 A

G(AV)

Average gate power dissipation Tj = 125°C 0.2 W

stg

Storage junction temperature range

Operating junction temperature range

- 40to+150

-40to+125

°C

TO202-3

(X04xxF)

Summary of content (5 pages)

PAGE 1
X04 Series 4A SCRS SENSITIVE MAIN FEATURES: Symbol Value Unit IT(RMS) 4 A V DRM/VRRM 600 and 800 V IGT 50 to 200 µA DESCRIPTION Thanks to highly sensitive triggering levels, the X04 SCR series is suitable for all applications where the available gate current is limited, such as capacitive discharge ignitions, motor control in kitchen aids, overvoltage crowbar protection in low power supplies...
PAGE 2
X04 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions X04xx 02 IGT RL = 140 Ω VD = 12 V VGT VGD VD = VDRM VRG IRG = 10 µA RL = 3.3 kΩ RGK = 1 kΩ Tj = 125°C Unit 05 MIN. _ 20 MAX. 200 50 µA MAX. 0.8 V MIN. 0.1 V MIN. 8 V IH IT = 50mA RGK = 1kΩ MAX. 5 mA IL IG = 1mA RGK = 1kΩ MIN. 6 mA dV/dt VD = 67% VDRM VTM ITM = 8 A Vt0 Rd IDRM IRRM RGK = 1kΩ Tj = 110°C MIN. Tj = 25°C MAX. 1.
PAGE 3
X04 Series ORDERING INFORMATION OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode X04xxyF 1AA2 X04xxyF 0.8 g 250 Bulk X04xxyF 0AA2 X04xxyF 0.8 g 50 Tube Note: xx = sensitivity, y = voltage Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus lead temperature. Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). Fig.
PAGE 4
X04 Series Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). Fig. 5: Relative variation of holding current versus gate-cathode resistance (typical values). Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). Fig. 8: Surge peak on-state current versus number of cycles. Fig.
PAGE 5
X04 Series Fig. 10: On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TO202-3 (Plastic) DIMENSIONS REF. Millimeters Min. A C D F H J M N N1 O P Typ. Inches Max. Min. Typ. 10.1 7.3 10.5 Max. 0.398 0.287 0.413 1.5 0.51 1.5 4.5 0.059 0.020 0.059 0.177 5.3 2.54 0.209 0.100 1.4 0.7 0.055 0.028 Information furnished is believed to be accurate and reliable.