Datasheet

TN12, TS12 and TYNx12 Series
2/10
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
SENSITIVE
STANDARD
THERMAL RESISTANCES
S = Copper surface under tab
Symbol Test Conditions TS1220 Unit
I
GT
V
D
= 12 V R
L
= 140
MAX. 200
µA
V
GT
MAX. 0.8 V
V
GD
V
D
= V
DRM
R
L
= 3.3 k R
GK
= 1 k
Tj = 125°C MIN.
0.1 V
V
RG
I
RG
= 10 µA
MIN.
8 V
I
H
I
T
= 50 mA R
GK
= 1 k
MAX. 5 mA
I
L
I
G
= 1 mA R
GK
= 1 k
MAX. 6 mA
dV/dt
V
D
= 67 % V
DRM
R
GK
= 220
Tj = 125°C MIN. 5 V/µs
V
TM
I
TM
= 24 A tp = 380 µs
Tj = 25°C MAX. 1.6 V
V
t0
Threshold voltage Tj = 125°C MAX. 0.85 V
R
d
Dynamic resistance Tj = 125°C MAX. 30 m
I
DRM
I
RRM
V
DRM
= V
RRM
R
GK
= 220
Tj = 25°C MAX. 5 µA
Tj = 125°C 2 mA
Symbol Test Conditions
TN1215 TYN
Unit
B/H G x12T x12
I
GT
V
D
= 12 V R
L
= 33
MIN. 2 0.5 2 mA
MAX. 15 5 15
V
GT
MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 k
Tj = 125°C MIN.
0.2 V
I
H
I
T
= 500 mA Gate open
MAX. 40 30 15 30 mA
I
L
I
G
= 1.2 I
GT
MAX.
80 60 30 60
mA
dV/dt V
D
= 67 % V
DRM
Gate open
Tj = 125°C MIN. 200 40 200 V/µs
V
TM
I
TM
= 24 A tp = 380 µs
Tj = 25°C
MAX.
1.6
V
V
t0
Threshold voltage Tj = 125°C
MAX.
0.85
V
R
d
Dynamic resistance Tj = 125°C
MAX.
30
m
I
DRM
I
RRM
V
DRM
= V
RRM
Tj = 25°C MAX. 5 µA
Tj = 125°C 2
mA
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC)
1.3
°C/W
R
th(j-a)
Junction to ambient TO-220AB 60 °C/W
IPAK 100
S = 1 cm
²
D
²
PAK
45
S = 0.5 cm
²
DPAK 70