Datasheet

GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC TXN 3.5 °C/W
TYN 2.5
Symbol Test Conditions Value Unit
I
GT
V
D
=12V (DC) R
L
=33Ω Tj=25°C MAX 15 mA
V
GT
V
D
=12V (DC) R
L
=33Ω Tj=25°C MAX 1.5 V
V
GD
V
D
=V
DRM
R
L
=3.3kΩ Tj= 125°C MIN 0.2 V
tgt V
D
=V
DRM
I
G
= 40mA
dI
G
/dt = 0.5A/µs
Tj=25°C TYP 2 µs
I
L
I
G
= 1.2 I
GT
Tj=25°C TYP 50 mA
I
H
I
T
= 100mA gate open Tj=25°C MAX 30 mA
V
TM
ITM= 24A tp= 380µs Tj=25°C MAX 1.6 V
I
DRM
I
RRM
V
DRM
Rated
V
RRM
Rated
Tj=25°C MAX 0.01 mA
Tj= 125°C3
dV/dt Linear slope up to V
D
=67%V
DRM
gate open
Tj= 125°C MIN 200 V/µs
tq V
D
=67%V
DRM
I
TM
= 24A V
R
= 25V
dI
TM
/dt=30 A/µsdV
D
/dt= 50V/µs
Tj= 125°C TYP 70 µs
P
G (AV)
=1W P
GM
= 10W (tp = 20 µs) I
FGM
= 4A (tp = 20 µs) V
RGM
=5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXN/TYN 0512 ---> TXN/TYN 1012
2/5