Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsThyristors & TriacsTYN 825 Thyristor

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

BTW67 and BTW69 Series

STANDARD 50A SCRs

September 2000 - Ed: 3

MAIN FEATURES:

DESCRIPTION

Available in high power packages, the BTW67 /

BTW69 Series is suitable in applications where

power handling and power dissipation are critical,

such as solid state relays, welding equipment,

high power motor control.

Based on a clip assembly technology, they offer a

superior performance in surge current handling

capabilities.

Thanks to their internal ceramic pad, they provide

high voltage insulation (2500V RMS), complying

with UL standards (file ref: E81734).

Symbol Value Unit

T(RMS)

50 A

DRM

RRM

600 to 1200 V

80 mA

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

T(RMS)

RMS on-state current

(180° conduction angle)

RD91 Tc = 70°C

50 A

TOP3 Ins. Tc = 75°C

T(AV)

Average on-state current

(180° conduction angle)

RD91 Tc = 70°C

32 A

TOP3 Ins. Tc = 75°C

TSM

Non repetitive surge peak on-state current tp = 8.3 ms

Tj = 25°C

610

tp = 10 ms 580

t Value for fusing

Tj = 25°C 1680

dI/dt

Critical rate of rise of on-state current I

2xI

,tr≤100 ns

F = 60 Hz Tj = 125°C50 A/µs

Peak gate current tp = 20 µs Tj = 125°C8 A

G(AV)

Average gate power dissipation Tj = 125°C1 W

stg

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

RGM

Maximum peak reverse gate voltage 5 V

RD91

(BTW67)

TOP3

(BTW69)

Summary of content (5 pages)

PAGE 1
BTW67 and BTW69 Series  50A SCRs STANDARD MAIN FEATURES: A Symbol Value Unit IT(RMS) 50 A V DRM/VRRM 600 to 1200 V IGT 80 mA G K K G A DESCRIPTION Available in high power packages, the BTW67 / BTW69 Series is suitable in applications where power handling and power dissipation are critical, such as solid state relays, welding equipment, high power motor control. Based on a clip assembly technology, they offer a superior performance in surge current handling capabilities.
PAGE 2
BTW67 and BTW69 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Value IGT MIN. 8 MAX. 80 MAX. 1 V MIN. 0.2 V MAX. 150 mA MAX. 200 mA Tj = 125°C MIN. 1000 V/µs Tj = 25°C MAX. 1.9 V RL = 33 Ω VD = 12 V VGT VGD VD = VDRM R L = 3.3 kΩ IH IT = 500 mA IL IG = 1.2 IGT Unit Tj = 125°C Gate open mA dV/dt VD = 67 % VDRM Gate open VTM ITM = 100 A Vt0 Threshold voltage Tj = 125°C MAX. 1.
PAGE 3
BTW67 and BTW69 Series Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2: Average and D.C. on-state current versus case temperature. Fig. 3: Relative variation of thermal impedance versus pulse duration. Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25°C] K = [Zth/Rth] 2.5 1E+0 2.0 1E-1 1.5 1.0 1E-2 0.5 1E-3 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.
PAGE 4
BTW67 and BTW69 Series Fig. 7: values). On-state characteristics (maximum PACKAGE MECHANICAL DATA RD91 (Plastic) DIMENSIONS L2 A2 L1 REF. Millimeters Min. B2 B1 C C2 C1 A1 N1 N2 B F E3 I A 4/5 A A1 A2 B B1 B2 C C1 C2 E3 F I L1 L2 N1 N2 Max. Inches Min. Max. 1.95 0.70 4.00 40.00 30.30 22.00 27.00 16.50 24.00 14.00 3.50 3.00 0.90 4.50 0.077 0.027 0.157 1.575 1.193 0.867 1.063 0.650 0.945 0.551 0.138 0.118 0.035 0.177 11.20 3.10 1.70 33° 28° 13.60 3.50 1.90 43° 38° 0.441 0.122 0.
PAGE 5
BTW67 and BTW69 Series PACKAGE MECHANICAL DATA TOP3 Ins.(Plastic) DIMENSIONS REF. Millimeters Min. Typ. Inches Max. Min. Typ. Max. A B C D E F G H 4.4 1.45 14.35 0.5 2.7 15.8 20.4 15.1 4.6 1.55 15.60 0.7 2.9 16.5 21.1 15.5 0.173 0.057 0.565 0.020 0.106 0.622 0.815 0.594 0.181 0.061 0.614 0.028 0.114 0.650 0.831 0.610 J K L P R 5.4 3.4 4.08 1.20 5.65 3.65 4.17 1.40 0.213 0.134 0.161 0.047 0.222 0.144 0.164 0.055 4.60 0.181 Information furnished is believed to be accurate and reliable.