Datasheet

Characteristics T1235H, T1250H
4/10 Doc ID 13574 Rev 2
Figure 1. Maximum power dissipation versus
on-state rms current (full cycle)
Figure 2. On-state rms current versus case
temperature (full cycle)
0
2
4
6
8
10
12
14
0123456789101112
P(W)
α=180 °
180°
I
T(RMS)
(A)
I
T(RMS)
(A)
0
2
4
6
8
10
12
14
0 25 50 75 100 125 150
α=180 °
TO-220AB
Insulated
TO-220AB/D²PAK
T
C
(°C)
Figure 3. On-state rms current versus
ambient temperature
Figure 4. Variation of thermal impedance
versus pulse duration
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 25 50 75 100 125 150
I
T(RMS)
(A)
α=180 °
D²PAK
S
CU
=1 cm²
T
amb
(°C)
Epoxy printed circuit board FR4,
copper thickness = 35 µm
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Z
th
(°C/W)
Z
th(j-a)
Z
th(j-c)
t
P
(s)
Figure 5. On-state characteristics
(maximum values)
Figure 6. Surge peak on-state current versus
number of cycles
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
I
TM
(A)
T
j
=25 °C
T
j
=150 °C
T
j
max. :
V
t0
= 0.80 V
R
d
= 30 mΩ
V
TM
(V)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
1 10 100 1000
I
TSM
(A)
Non repetitive
T
j
initial=25 °C
Repetitive
T
c
=120 °C
One cycle
t=20ms
Number of cycles