Electrical characteristics STW69N65M5-4
8/13 DocID024925 Rev 2
Figure 14. Switching losses vs gate
resistance
(1)
1. Eon including reverse recovery of a SiC diode.
E
0
0
20
R
G(Ω)
(µJ)
10
30
200
40
Eon
Eo
400
600
800
1000
1200
1400
VDD=400 V
ID=38 A
AM15939v1
