Datasheet

DocID024925 Rev 2 7/13
STW69N65M5-4 Electrical characteristics
13
Figure 8. Capacitance variations Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage vs
temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized V
DS
vs temperature
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V GS(th)
1.00
0.90
0.80
0.70
-50
0
T
J (°C)
(norm)
-25
1.10
75
25
50
100
I D =250 μA
V
DS =V GS
AM05459v2
R DS(on)
1.7
1.5
0.9
0.5
-50
0
T
J (°C)
(norm)
-25
75
25
50
100
0.7
1.1
1.3
1.9
2.1
125
I
D = 29 A
V
GS = 10 V
AM05501v2
V SD
0
20
I
SD (A)
(V)
10
50
30
40
0
0.2
0.4
0.6
0.8
1.0
1.2
T J =-50°C
T J =150°C
T J =25°C
AM05461v1
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