Datasheet

DocID024925 Rev 2 5/13
STW69N65M5-4 Electrical characteristics
13
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(V)
Voltage delay time
V
DD
= 400 V, I
D
= 38 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 17)
(see Figure 20)
-102-ns
t
r(V)
Voltage rise time - 10 - ns
t
f(i)
Current fall time - 11.5 - ns
t
c(off)
Crossing time - 14.5 - ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 58 A
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 232 A
V
SD
(2)
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage I
SD
= 58 A, V
GS
= 0 - 1.5 V
t
rr
Reverse recovery time
I
SD
= 58 A,
di/dt = 100 A/μs
V
DD
= 100 V (see Figure 17)
- 480 ns
Q
rr
Reverse recovery charge - 11 μC
I
RRM
Reverse recovery current - 46 A
t
rr
Reverse recovery time I
SD
= 58 A,
di/dt = 100 A/μs
V
DD
= 100 V, T
j
= 150 °C
(see Figure 17)
- 592 ns
Q
rr
Reverse recovery charge - 16 μC
I
RRM
Reverse recovery current - 53 A