Datasheet

Electrical characteristics STW69N65M5-4
4/13 DocID024925 Rev 2
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 4. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 mA, V
GS
= 0 650 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= 650 V
V
DS
= 650 V, T
C
=125 °C
1
100
μA
μA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 25 V ± 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 μA345V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 29 A 0.037 0.045 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
- 6420 - pF
C
oss
Output capacitance - 170 - pF
C
rss
Reverse transfer
capacitance
-11-pF
C
o(tr)
(1)
1. C
o(tr)
is a constant capacitance value that gives the same charging time as C
oss
while V
DS
is rising from 0
to 80% V
DSS
.
Equivalent
capacitance time
related
V
GS
= 0, V
DS
= 0 to 520 V - 536 - pF
C
o(er)
(2)
2. C
o(er)
is a constant capacitance value that gives the same stored energy as C
oss
while V
DS
is rising from 0
to 80% V
DSS
.
Equivalent
capacitance energy
related
V
GS
= 0, V
DS
= 0 to 520 V - 146 - pF
R
G
Intrinsic gate
resistance
f = 1 MHz open drain - 1.3 - Ω
Q
g
Total gate charge
V
DD
= 520 V, I
D
= 29 A,
V
GS
= 10 V
(see Figure 16)
- 143 - nC
Q
gs
Gate-source charge - 38 - nC
Q
gd
Gate-drain charge - 64 - nC