Datasheet

DocID024925 Rev 2 3/13
STW69N65M5-4 Electrical ratings
13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate- source voltage ±25 V
I
D
Drain current (continuous) at T
C
= 25 °C 58 A
I
D
Drain current (continuous) at T
C
= 100 °C 36.5 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 232 A
P
TOT
Total dissipation at T
C
= 25 °C 330 W
I
AR
Max current during repetitive or single pulse avalanche
(pulse width limited by T
JMAX
)
12 A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
1410 mJ
dv/dt
(2)
2. I
SD
≤ 58 A, di/dt = 400 A/μs, peak V
DS
< V
(BR)DSS
, V
DD
= 400 V
Peak diode recovery voltage slope 15 V/ns
dv/dt
(3)
3. V
DS
≤ 520 V
MOSFET dv/dt ruggedness 50 V/ns
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max 0.38 °C/W
R
thj-amb
Thermal resistance junction-ambient max 50 °C/W