Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsSTW69N65M5-4, MOSFET

This is information on a product in full production.

January 2014 DocID024925 Rev 2 1/13

STW69N65M5-4

N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh™ V Power MOSFET

in a TO247-4 package

Datasheet

production data

Figure 1. Internal schematic diagram

Features

• Higher V

rating

• Higher dv/dt capability

• Excellent switching performance thanks to the

extra driving source pin

• Easy to drive

• 100% avalanche tested

Applications

• High efficiency switching applications:

–Servers

–PV inverters

– Telecom infrastructure

– Multi kW battery chargers

Description

This device is an N-channel MDmesh™ V Power

MOSFET based on an innovative proprietary

vertical process technology, which is combined

with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

Drain(1)

Gate(4)

Driver

source(3)

Power

source(2)

AM10177v1

TO247-4

Order code V

@ T

Jmax

DS(on)

max

STW69N65M5-4 710 V 0.045 Ω 58 A

Table 1. Device summary

Order code Marking Package Packaging

STW69N65M5-4 69N65M5 TO247-4 Tube

www.st.com

Summary of content (13 pages)

PAGE 1
STW69N65M5-4 N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh™ V Power MOSFET in a TO247-4 package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STW69N65M5-4 710 V 0.045 Ω 58 A • Higher VDS rating 2 • Higher dv/dt capability 4 3 1 • Excellent switching performance thanks to the extra driving source pin TO247-4 • Easy to drive • 100% avalanche tested Figure 1.
PAGE 2
Contents STW69N65M5-4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . .
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STW69N65M5-4 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit Gate- source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 58 A ID Drain current (continuous) at TC = 100 °C 36.
PAGE 4
Electrical characteristics 2 STW69N65M5-4 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ.
PAGE 5
STW69N65M5-4 Electrical characteristics Table 6. Switching times Symbol Parameter td(V) Voltage delay time tr(V) Voltage rise time tf(i) Current fall time tc(off) Test conditions VDD = 400 V, ID = 38 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) (see Figure 20) Crossing time Min. Typ. Max. Unit - 102 - ns - 10 - ns - 11.5 - ns - 14.5 - ns Min. Typ. Table 7. Source drain diode Symbol Parameter Test conditions Max.
PAGE 6
Electrical characteristics 2.1 STW69N65M5-4 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance $0 Y ,' $ V 2 /L SHU P DW LWH LR GĆ QĆL E\ QĆ ĆP WKL D[ VĆD Ć5' UH DĆ 6 LV RQ V PV PV 7M & 7F & 6LQOJH SXOVH 9'6 9 Figure 4. Output characteristics Figure 5.
PAGE 7
STW69N65M5-4 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy $0 Y & S) $0 Y (RVV &LVV &RVV &UVV Figure 10. Normalized gate threshold voltage vs temperature AM05459v2 VGS(th) (norm) 1.10 9'6 9 9'6 9 Figure 11. Normalized on-resistance vs temperature AM05501v2 RDS(on) (norm) ID=250 μA VDS=VGS 2.1 ID= 29 A 1.9 1.00 VGS= 10 V 1.7 1.
PAGE 8
Electrical characteristics STW69N65M5-4 Figure 14. Switching losses vs gate resistance (1) AM15939v1 E (µJ) 1400 Eon VDD=400 V ID=38 A 1200 1000 800 Eoff 600 400 200 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode.
PAGE 9
STW69N65M5-4 3 Test circuits Test circuits Figure 15. Switching times test circuit for resistive load Figure 16. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 mF 2200 RL mF IG=CONST VDD VGS RG 100Ω Vi=20V=VGMAX VD 2200 mF D.U.T. PW D.U.T. VG 2.7kΩ 47kΩ GND1 (driver signal) GND2 (power) 1kΩ PW GND1 AM15855v1 Figure 17. Test circuit for inductive load switching and diode recovery times A A AM15856v1 Figure 18. Unclamped inductive load test circuit A D G GND2 L D.U.T.
PAGE 10
Package mechanical data 4 STW69N65M5-4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 21.
PAGE 11
STW69N65M5-4 Package mechanical data Table 8. TO247-4 mechanical data mm. Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 b1 1.15 b2 0 0.20 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.20 1.35 D3 24.97 25.12 25.27 E 15.70 15.80 15.90 E1 13.10 13.30 13.50 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 2.44 2.54 2.64 e1 4.98 5.08 5.18 L 19.80 19.92 20.10 P 3.50 3.60 3.70 1.
PAGE 12
Revision history 5 STW69N65M5-4 Revision history Table 9. Document revision history 12/13 Date Revision Changes 28-Jun-2013 1 Initial release. 17-Jan-2014 2 Document status promoted from preliminary to production data.
PAGE 13
STW69N65M5-4 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.