Datasheet

DocID024622 Rev 1 7/21
STD7N60M2, STP7N60M2, STU7N60M2 Electrical characteristics
21
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance
Figure 10. Capacitance variations Figure 11. Output capacitance stored energy
Figure 12. Normalized gate threshold voltage
vs. temperature
Figure 13. Normalized on-resistance vs.
temperature
V GS
6
4
2
0
0
2
Q
g (nC)
(V)
8
8
4
6
10
12
300
200
100
0
400
500
V
DS
V DS
(V)
V DD =480V
I
D =5A
10
AM15824v1
R DS(on)
0.860
0.850
0.840
0.830
0
3
I
D (A)
(Ω)
2
4
0.870
V
GS =10V
5
1
0.880
0.890
0.900
0.910
AM15817v1
C
100
10
1
0.1
0.1
10
V
DS (V)
(pF)
1
100
Ciss
Coss
Crss
1000
AM15818v1
E oss
2
1
0
0
V
DS (V)
(µJ)
200
100
300 400 500
600
AM15819v1
V GS(th)
0.9
0.8
0.7
0.6
T
J (°C)
(norm)
-50
1.0
I
D =250µA
0
50
100
1.1
AM15718v1
R DS(on)
1.3
0.9
0.5
-50
-25
T
J (°C)
(norm)
0
100
0.7
1.1
I
D =2.5 A
1.5
25
50
75
1.7
1.9
2.1
2.3
AM15821v1