Datasheet

DocID024622 Rev 1 3/21
STD7N60M2, STP7N60M2, STU7N60M2 Electrical ratings
21
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 5 A
I
D
Drain current (continuous) at T
C
= 100 °C 3.5 A
I
DM
(1)
Drain current (pulsed) 20 A
P
TOT
Total dissipation at T
C
= 25 °C 60 W
dv/dt
(1)
1. I
SD
≤ 5 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
=400 V
Peak diode recovery voltage slope 15
V/ns
dv/dt
(2)
2. V
DS
≤ 480 V
MOSFET dv/dt ruggedness 50
T
stg
Storage temperature
- 55 to 150 °C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter
Value
Unit
DPAK TO-220 IPAK
R
thj-case
Thermal resistance junction-case max 2.08 2.08 °C/W
R
thj-pcb
Thermal resistance junction-pcb max
(1)
1. When mounted on 1 inch² FR-4, 2 Oz copper board
50 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 100 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive (pulse width
limited by T
jmax
)
1.5 A
E
AS
Single pulse avalanche energy (starting T
j
=25°C, I
D
= I
AR
;
V
DD
=50)
99 mJ