Datasheet

This is information on a product in full production.
June 2013 DocID024622 Rev 1 1/21
STD7N60M2, STP7N60M2,
STU7N60M2
N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus™ low Q
g
Power MOSFET in DPAK, TO-220 and IPAK packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
Extremely low gate charge
Lower R
DS(on)
x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
TO-220
1
2
3
TAB
1
3
TAB
DPAK
3
2
1
TAB
IPAK
AM15572v1
, TAB
Order codes
V
DS
@
T
Jmax
R
DS(on)
max
I
D
STD7N60M2
650 V 0.95 Ω 5 ASTP7N60M2
STU7N60M2
Table 1. Device summary
Order codes Marking Package Packaging
STD7N60M2
7N60M2
DPAK Tape and reel
STP7N60M2 TO-220
Tube
STU7N60M2 IPAK
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