Datasheet

STTH1R06 Characteristics
Doc ID 10203 Rev 5 5/9
Figure 11. Transient peak forward voltage vs
dI
F
/dt (typical values)
Figure 12. Forward recovery time vs dI
F
/dt
(typical values)
Figure 13. Junction capacitance versus
reverse voltage applied
(typical values)
Figure 14. Thermal resistance junction to
ambient versus copper surface
under each lead
Figure 15. Thermal resistance junction to ambient versus copper surface under each lead
(epoxy FR4, Cu = 35 µm) (SMA)
V (V)
FP
0
5
10
15
20
25
0 20 40 60 80 100 120 140 160 180 200
dI /dt(A/µs)
F
I=I
T =125°C
F F(AV)
j
t (ns)
fr
0
20
40
60
80
100
120
140
160
180
200
0 20 40 60 80 100 120 140 160 180 200
I=I
T =125°C
F F(AV)
j
V =1.1 x V max.
FR F
dI /dt(A/µs)
F
1
10
100
1 10 100 1000
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC
j
0
10
20
30
40
50
60
70
80
90
100
110
0
12
3
4
56
7
89
1
0
R (°C/W)
th(j-a)
S(cm²)
DO-41
Lleads = 10mm
SMB
(epoxy FR4, Cu = 35 µm) (DO-41, SMB)
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
R (°C/W)
th(j-a)
S(cm²)
SMA