Datasheet

Characteristics STPS8H100
2/10 DocID5387 Rev 11
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.48 x I
F(AV)
+ 0.0125 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
RMS forward voltage 30
A
I
F(AV)
Average forward current
δ = 0.5
TO-220AC, D
2
PAK T
C
= 165° C
8
A
TO-220FPAC T
C
= 150° C
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 250
A
P
ARM
Repetitive peak avalanche power t
p
= 10 µs T
j
= 125° C 750 W
T
stg
Storage temperature range -65 to + 175 ° C
T
j
Maximum operating junction temperature 175 ° C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AC, D
2
PAK 1.6
° C/W
TO-220FPAC 4
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25° C
V
R
= V
RRM
4.5 µA
T
j
= 125° C 2 6.0 mA
V
F
(2)
Forward voltage drop
T
j
= 25° C
I
F
= 8 A
0.71
V
T
j
= 125° C 0.56 0.58
T
j
= 25° C
I
F
= 10 A
0.77
T
j
= 125° C 0.59 0.64
T
j
= 25° C
I
F
= 16 A
0.81
T
j
= 125° C 0.65 0.68
1. t
p
= 5 ms, δ < 2%
2. t
p
= 380 µs, δ < 2%