Datasheet

STPS30L45C Characteristics
Doc ID 8002 Rev 4 3/12
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
0.4 mA
T
j
= 125 °C 100 200 mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C I
F
= 15 A 0.55
V
T
j
= 125 °C I
F
= 15 A 0.42 0.50
T
j
= 25 °C I
F
= 30 A 0.74
T
j
= 125 °C I
F
= 30 A 0.59 0.67
1. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.330 x I
F(AV)
+ 0.011 I
F
2
(RMS)
Figure 1. Average forward power dissipation
versus average forward current
(per diode)
Figure 2. Average forward current versus
ambient temperature
(
δ = 0.5, per diode)
02468101214161820
0
2
4
6
8
10
12
IF(av) (A)
PF(av)(W)
T
δ
=tp/T
tp
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
0 25 50 75 100 125 150
0
2
4
6
8
10
12
14
16
18
Tamb(°C)
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
TO-220FPAB
TO-220AB/TO-247/I²PAK/D²PAK
T
δ
=tp/T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4. Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.10.01 1
0.1
10 100 1000
1
t (µs)
p
P(t
p
)
P (1 µs)
ARM
ARM
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125 150
T (°C)
j
P(T
j
)
P (25 °C)
ARM
ARM