Datasheet

STPS20H100C Characteristics
Doc ID 5386 Rev 7 5/11
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
Figure 8. Relative variation of thermal
impedance junction to case versus
pulse duration (per diode)
Z/R
th(j-c) th(j-c)
1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
T
δ
=t /T
p
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
TO-220AB, D PAK, I PAK
22
1E-2 1E-1 1E+0 1E+1
0.0
0.2
0.4
0.6
0.8
1.0
Z/R
th(j-c) th(j-c)
T
δ
=tp/T
tp
t (s)
p
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
TO-220FPAB
Figure 9. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 10. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
I (µA)
R
0 102030405060708090100
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
V (V)
R
T =125°C
j
T =150°C
j
T =100°C
j
T =25°C
j
1 2 5 10 20 50 100
100
200
500
1000
C(pF)
V (V)
R
F=1MHz
V =30mV
T =25°C
OSC RMS
j
Figure 11. Forward voltage drop versus
forward current
(maximum values, per diode)
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab
I (A)
FM
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1.0
10.0
100.0
V (V)
FM
T =125°C
(typical values)
j
T =25°C
j
T =125°C
j
T =150°C
(typical values)
j
R (°C/W)
th(j-a)
0 5 10 15 20 25 30 35 40
0
10
20
30
40
50
60
70
80
S(Cu)(cm²)