Datasheet

Characteristics STPS20H100C
4/11 Doc ID 5386 Rev 7
Figure 1. Average forward power dissipation
versus average forward current
(per diode)
Figure 2. Average forward current versus
ambient temperature
(δ = 0.5, per diode)
P (W)
F(AV)
024681012
0
2
4
6
8
T
δ
=tp/T
tp
I (A)
F(AV)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
I (A)
F(AV)
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12
TO-220FPAB
TO-220AB
R=R
th(j-a) th(j-c)
R =15°C/W
th(j-a)
R =40°C/W
th(j-a)
T (°C)
amb
T
δ
=tp/T
tp
Figure 3. Normalized avalanche power
derating versus pulse duration
Figure 4. Normalized avalanche power
derating versus junction
temperature
0.001
0.01
0.10.01 1
0.1
10 100
1000
1
P(t
p
)
P (1µs)
ARM
ARM
t (µs)
p
0
0.2
0.4
0.6
0.8
1
1.2
25 50 75 100 125
150
P(T)
P (25 °C)
ARM j
ARM
T (°C)
j
Figure 5. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
Figure 6. Non repetitive surge peak forward
current versus overload duration
(maximum values, per diode)
I (A)
M
1E-3 1E-2 1E-1 1E+0
0
20
40
60
80
100
120
140
160
180
200
I M
t
δ =0.5
t(s)
T =50°C
C
T =75°C
C
T =125°C
C
TO-220AB, D PAK, I PAK
22
1E-3 1E-2 1E-1 1E+0
0
20
40
60
80
100
120
140
I (A)
M
I M
t
δ =0.5
t(s)
T =50°C
j
T =75°C
j
T =125°C
j
TO-220FPAB