Datasheet

Characteristics STPS20H100C
2/11 Doc ID 5386 Rev 7
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
Table 2. Absolute ratings (limiting values, per diode)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 100 V
I
F(RMS)
Forward rms current 30 A
I
F(AV)
Average forward
current δ = 0.5
TO-220AB
D
2
PAK / I
2
PA K
T
c
= 160 °C Per diode 10
A
TO-220FPAB T
c
= 145 °C Per device 20
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 250 A
I
RRM
Repetitive peak reverse current t
p
= 2 µs square F= 1 kHz 1 A
I
RSM
Non repetitive peak reverse current t
p
= 100 µs square 3 A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 10800 W
T
stg
Storage temperature range -65 to + 175 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
dV/dt Critical rate of rise of reverse voltage 10000 V/µs
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AB / D
2
PAK / I
2
PAK Per diode 1.6
°C/W
TO-220FPAB Per diode 4
TO-220AB / D
2
PA K / I
2
PAK Total 0.9
°C/W
TO-220FPAB Total 3.2
R
th(c)
TO-220AB / D
2
PA K / I
2
PAK Coupling 0.15
°C/W
TO-220FPAB Coupling 2.5
dPtot
dTj
<
1
Rth(j-a)