Datasheet

Characteristics STPS20150C
4/10 Doc ID 7756 Rev 9
Figure 7. Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 8. Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
TO-220AB, I PAK and D PAK
22
t (s)
p
Z/R
th(j-c) th(j-c)
T
δ
=tp/T
tp
δ = 0.5
δ = 0.2
δ = 0.1
Single pulse
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
TO-220FPAB
t (s)
p
Z/R
th(j-c) th(j-c)
T
δ
=tp/T
tp
δ
= 0.5
δ
= 0.2
δ
= 0.1
Single pulse
Figure 9. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 10. Junction capacitance versus
reverse voltage applied
(typical values, per diode)
0 25 50 75 100 125 150
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
1E+5
I (µA)
R
V (V)
R
T =175°C
j
T =150°C
j
T =125°C
j
T =100°C
j
T =25°C
j
1 2 5 10 20 50 100 200
10
100
1000
C(pF)
F=1MHz
T =25°C
j
V (V)
R
Figure 11. Forward voltage drop versus
forward current (per diode)
Figure 12. Thermal resistance junction to
ambient versus copper surface
under tab
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0.1
1.0
10.0
100.0
I (A)
FM
V (V)
FM
T =125°C
(typical values)
j
T =25°C
j
T =125°C
j
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
S(cm²)
R (°C/W)
th(j-a)
Epoxy printed circuit board, copper thickness = 35 µm
(STPS20150CG only)