Datasheet

Characteristics STPS20150C
2/10 Doc ID 7756 Rev 9
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
ΔT
j
(diode 1) = P(diode 1) x R
th(j-l)
(Per diode) + P(diode 2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 0.64 x I
F(AV)
+ 0.011 I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 150
V
I
F(RMS)
Forward rms voltage 30
A
I
F(AV)
Average forward
current δ = 0.5
TO-220AB
I
2
PAK, D
2
PA K
T
c
= 155 °C Per diode 10
A
TO-220FPAB T
c
= 135 °C Per device 20
I
FSM
Surge non repetitive forward current t
p
= 10 ms sinusoidal 180
A
P
ARM
Repetitive peak avalanche power t
p
= 1 µs T
j
= 25 °C 6700
W
T
stg
Storage temperature range - 65 to + 150 °C
T
j
Maximum operating junction temperature
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
175 °C
Table 3. Thermal resistance
Symbol Parameter Value Unit
R
th(j-c)
Junction to case
TO-220AB, D
2
PAK, I
2
PA K
Per diode
2.2
°C/W
TO-220FPAB 4.5
TO-220AB, D
2
PAK, I
2
PA K
Tot al
1.3
TO-220FPAB 3.5
R
th(c)
Coupling
TO-220AB, D
2
PAK, I
2
PA K 0. 3
TO-220FPAB 2.5
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. t
p
= 5 ms, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
5.0 µA
T
j
= 125 °C 5.0 mA
V
F
(2)
2. t
p
= 380 µs, δ < 2%
Forward voltage drop
T
j
= 25 °C
I
F
= 10 A
0.92
V
T
j
= 125 °C 0.69 0.75
T
j
= 25 °C
I
F
= 20 A
1
T
j
= 125 °C 0.79 0.86
dPtot
dTj
<
1
Rth(j-a)