Datasheet
DocID8563 Rev 3 3/8
STPS15L30C Characteristics
8
Figure 1. Average forward power dissipation
versus average forward current (per diode)
Figure 2. Average forward current versus
ambient temperature (
δ = 0.5)(per diode)
,
)DY
$
3
) D Y
:
7
į
WS7
WS
į
į
į
į
į
7
DP E
&
5
WK
M
D
5
WK
M
F
7
į WS7
WS
,
)DY
$
5
WK
M
D
&:
Figure 3. Normalized avalanche power derating
versus pulse duration at T
j
= 125 °C
Figure 4. Relative variation of thermal
impedance junction to case versus pulse
duration
P(t
p
)
P (10 µs)
ARM
ARM
0.001
0.01
0.1
1
1 10 100 1000
t (µs)
p
(
(
(
(
WSV
=
WKM
F
5
WKMF
7
WS7
WS
į
į
į
į
6 LQJOHSXOVH
Figure 5. Reverse leakage current versus
reverse voltage applied
(typical values, per diode)
Figure 6. Junction capacitance versus reverse
voltage applied (typical values, per diode)
(
(
(
(
(
(
9
5
9
7
M
&
,
5
P$
7
M
&
7
M
&
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M
&
7
M
&
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M
&
)
0+]
9
RVF
P
9
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&
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9
5
9