Datasheet

Electrical characteristics STP80NF12
3/12 DocID9204 Rev 8
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 μA, V
GS
= 0 120 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= max rating
V
DS
= max rating @125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20 V ±100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 40 A 0.013 0.018 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance V
DS
=15 V, I
D
= 40 A - 80 S
C
iss
Input capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
-4300 pF
C
oss
Output capacitance - 600 pF
C
rss
Reverse transfer
capacitance
-230 pF
Q
gs
Total gate charge
V
DD
= 80 V, I
D
= 80 A
V
GS
=10 V
-140189nC
Q
gs
Gate-source charge - 23 nC
Q
gd
Gate-drain charge - 51 nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 50 V, I
D
= 40 A,
R
G
=4.7 Ω, V
GS
=10 V
See Figure 13
-40- ns
t
r
Rise time - 145 - ns
t
d(off)
Turn-off delay time - 134 - ns
t
f
Fall time - 115 - ns