Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsSTP80NF12, MOSFET

This is information on a product in full production.

February 2014 DocID9204 Rev 8 0/12

STP80NF12

N-channel 120 V, 0.013 Ω typ., 80 A, STripFET™ II

Power MOSFET in a TO-220 package

Datasheet

production data

Figure 1. Internal schematic diagram

Features

• Exceptional dv/dt capability

• 100% avalanche tested

• Application oriented characterization

Application

• Switching applications

Description

This MOSFET series realized with

STMicroelectronics unique STripFET process has

specifically been designed to minimize input

capacitance and gate charge. It is therefore

suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC

converters for telecom and computer

applications. It is also intended for any

applications with low gate drive requirements.

TO-220

TA B

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Type V

DSS

DS(on)

max

STP80NF12 120 V < 0.018 Ω 80 A

Table 1. Device summary

Order code Marking Package Packaging

STP80NF12 P80NF12 TO-220 Tube

www.st.com

Summary of content (13 pages)

PAGE 1
STP80NF12 N-channel 120 V, 0.013 Ω typ., 80 A, STripFET™ II Power MOSFET in a TO-220 package Datasheet - production data Features Type VDSS RDS(on) max ID STP80NF12 120 V < 0.018 Ω 80 A TAB • Exceptional dv/dt capability • 100% avalanche tested 3 1 2 • Application oriented characterization TO-220 Application • Switching applications Description Figure 1.
PAGE 2
Contents STP80NF12 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) ............................. 5 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 5 Revision history . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
STP80NF12 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 120 V VGS Gate-source voltage ± 20 V Drain current (continuous) at TC = 25 °C 80 A ID (1) ID Drain current (continuous) at TC=100 °C 60 A IDM(2) Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 300 W Derating factor 2.
PAGE 4
Electrical characteristics 2 STP80NF12 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Drain-source breakdown voltage ID = 250 μA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating @125°C IGSS Gate body leakage current (VDS = 0) VGS = ±20 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 40 A V(BR)DSS Min. Typ.
PAGE 5
STP80NF12 Electrical characteristics Table 7. Source drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max Unit Source-drain current - - 80 A Source-drain current (pulsed) - - 320 A 1.3 V Forward on voltage ISD=80 A, VGS=0 - - trr Reverse recovery time - 155 ns Qrr Reverse recovery charge - 0.85 µC IRRM Reverse recovery current ISD=80 A, di/dt = 100 A/µs, VDD=35 V, TJ = 150 °C - 11 A 1. Pulse width limited by safe operating area 2.
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Electrical characteristics 2.1 STP80NF12 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs. temperature Figure 7.
PAGE 7
STP80NF12 Electrical characteristics Figure 8. Gate charge vs. gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs. temperature Figure 11. Normalized on resistance vs. temperature Figure 12.
PAGE 8
Test circuits 3 STP80NF12 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.
PAGE 9
STP80NF12 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
PAGE 10
Package mechanical data STP80NF12 Figure 19.
PAGE 11
STP80NF12 Package mechanical data Table 8. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.
PAGE 12
Revision history 5 STP80NF12 Revision history Table 9. Revision history Date Revision 21-Jun-2004 2 Preliminary version 24-Jul-2006 3 The document has been reformatted, SOA updated 31-Jan-2007 4 Typo mistake on Table 2. 10-Apr-2007 5 Typo mistake on Table 2 and Table 3 19-Apr-2007 6 Corrected value on Table 4 17-Nov-2008 7 Inserted EAS value on Table 2. 8 Updated: Section 4: Package mechanical data Inserted EAS value on Table 2.
PAGE 13
STP80NF12 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.