Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsSTP80NF10, MOSFET N channel 200V

1/11February 2005

STP80NF10

STB80NF10

N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D

PAK

LOW GATE CHARGE STripFET™II MOSFET

Table 1: General Features

■ TYPICAL R

(on) = 0.012Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100% AVALANCHE TESTED

■ APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelec-

tronics unique STripFET process has specifically

been designed to minimize input capacitance and

gate charge. It is therefore suitable as primary

switch in advanced high-efficiency isolated DC-DC

converters for Telecom and Computer application.

It is also intended for any application with low gate

charge drive requirements.

APPLICATIONS

■ HIGH-EFFICIENCY DC-AC CONVERTERS

■ UPS AND MOTOR CONTROL

Table 2: Order Codes

Figure 1: Package

Figure 2: Internal Schematic Diagram

TYPE V

DSS

DS(on)

STB80NF10

STP80NF10

100 V

< 0.015 Ω

80 A

TO-220

PAK

SALES TYPE MARKING PACKAGE PACKAGING

STB80NF10T4 B80NF10@

PAK

TAPE & REEL

STP80NF10 P80NF10@ TO-220 TUBE

Rev. 3

Summary of content (11 pages)

PAGE 1
STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK LOW GATE CHARGE STripFET™II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS(on) ID STB80NF10 STP80NF10 100 V 100 V < 0.015 Ω < 0.015 Ω 80 A 80 A ■ ■ ■ ■ TYPICAL RDS(on) = 0.
PAGE 2
STP80NF10 - STB80NF10 Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS Parameter Value Unit Drain-source Voltage (VGS = 0) 100 V Drain-gate Voltage (RGS = 20 kΩ) 100 V Gate- source Voltage ±20 V ID Drain Current (continuous) at TC = 25°C 80 A ID Drain Current (continuous) at TC = 100°C 80 (*) A Drain Current (pulsed) 320 A Total Dissipation at TC = 25°C IDM ( ) PTOT 300 W Derating Factor 2 W/°C dv/dt (1) Peak Diode Recovery voltage slope 7 V/ns EAS (2) Single Pulse A
PAGE 3
STP80NF10 - STB80NF10 ELECTRICAL CHARACTERISTICS (CONTINUED) Table 7: Dynamic Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions Min. VDS = 15V , ID = 40A VDS = 25V, f = 1 MHz, VGS = 0 Typ. Max. Unit 50 S 5500 700 175 pF pF pF Table 8: Switching On Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) tr Turn-on Delay Time Rise Time VDD = 50V, ID = 40A RG = 4.
PAGE 4
STP80NF10 - STB80NF10 Figure 3: Safe Operating Area Figure 6: Thermal Impedance Figure 4: Output Characteristics Figure 7: Transfer Characteristics Figure 5: Transconductance Figure 8: Static Drain-source On Resistance 4/11
PAGE 5
STP80NF10 - STB80NF10 Figure 9: Gate Charge vs Gate-source Voltage Figure 12: Capacitance Variations Figure 10: Normalized Gate Thereshold Voltage vs Temperature Figure 13: Normalized On Resistance vs Temperature Figure 11: Source-Drain Diode Forward Characteristics 5/11
PAGE 6
STP80NF10 - STB80NF10 Figure 14: Switching Times Test Circuit For Resistive Load Figure 15: Test Circuit For Inductive Load Switching and Diode Recovery Times 6/11 Figure 16: Gate Charge Test Circuit
PAGE 7
STP80NF10 - STB80NF10 TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.
PAGE 8
STP80NF10 - STB80NF10 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 0.368 D1 E 8 10 E1 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.
PAGE 9
STP80NF10 - STB80NF10 D2PAK FOOTPRINT TUBE SHIPMENT (no suffix)* TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. A B DIM. mm inch MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 MIN. 330 1.5 C 12.8 D 20.2 G 24.
PAGE 10
STP80NF10 - STB80NF10 Table 11: Revision History Date Revision 04-Nov-2003 22-Nov-2004 21-Jan-2005 1 2 3 10/11 Description of Changes NEW DATASHEET ACCORDING TO PCN DSG-TRA/03/382 NEW STYLESHEET, NO CONTENT CHANGE Value Change on Table 3
PAGE 11
STP80NF10 - STB80NF10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice.