Datasheet
DocID025105 Rev 3 7/23
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 Electrical characteristics
23
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
Figure 12. Capacitance variations Figure 13. Normalized gate threshold voltage vs
temperature
I
D
4
2
0
0
8
V
DS
(V)
16
(A)
4
12
6V
7V
V
GS
=10, 11 V
5
3
1
8V
9V
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I
D
4
2
0
5
7
V
GS
(V)
9
(A)
6
8
1
3
5
V
DS
=20V
10
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VGS
6
4
2
0
0
2
Q
g(nC)
(V)
8
8
4
6
10
VDD=640V
I
D=3A
300
200
100
0
400
V
DS
(V)
500
V
DS
12
10
600
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5
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9
*6
9
*,3'59
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9
'69
S)
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&RVV
&UVV
*,3'59
V
GS(th)
1
0.8
0.6
0.4
-50
0
T
J
(°C)
(norm)
50
100
I
D
=100µA
V
DS
=V
GS
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