Datasheet

DocID025105 Rev 3 3/23
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5 Electrical ratings
23
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
DPAK,
IPAK
TO-220FP TO-220
V
DS
Drain-source voltage 800 V
V
GS
Gate- source voltage ±30 V
I
D
Drain current (continuous) at T
C
= 25 °C 3 3
(1)
1. Limited by maximum junction temperature
3A
I
D
Drain current (continuous) at T
C
= 100 °C 1.7 1.7
(1)
1.7 A
I
DM
(2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 12 12
(1)
12 A
P
TOT
Total dissipation at T
C
= 25 °C 60 20 60 W
I
AR
Avalanche current, repetitive or not-
repetitive (pulse width limited by T
J
max)
1A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
74.5 mJ
dv/dt
(3)
3. I
SD
< 3 A, di/dt < 100 A/µs, V
DS(peak)
≤ V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
dv/dt
(4)
4. V
DS
≤ 640 V
MOSFET dv/dt ruggedness 50 V/ns
V
ISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s, T
C
= 25 °C)
2500 V
T
J
Operating junction temperature
-55 to 150
°C
T
stg
Storage temperature °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
DPAK,
IPAK
TO-220FP TO-220
R
thj-case
Thermal resistance junction-case max 2.08 6.25 2.08 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 °C/W
R
thj-pcb
(1)
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max 50 °C/W