Datasheet
DocID024455 Rev 1 7/19
STD45N10F7, STI45N10F7, STP45N10F7 Electrical characteristics
19
Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs
temperature
C
1000
100
0
0
20
V
DS
(V)
(pF)
Ciss
Coss
Crss
40
60
80
AM16114v1
V
GS(th)
0.8
0.6
0.4
0.2
-75
0
T
J
(°C)
(norm)
-50
1
75
25
50
100
I
D
=250µA
-50
125
150
1.2
AM16115v1
Figure 10. Normalized on-resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
R
DS(on)
2
1
0
-75
0
T
J
(°C)
(norm)
-50
75
25
50
100
0.5
1.5
-25
125
I
D
=22.5A
V
GS
=10 V
AM16116v1
V
SD
5
15
I
SD
(A)
(V)
10
30
20
25
0.4
0.5
0.6
0.7
T
J
=-55°C
T
J
=175°C
T
J
=25°C
0.8
0.9
35
40
1
AM16117v1
Figure 12. Normalized V
(BR)DS
vs temperature
V
-75
0
T
J
(°C)
(norm)
-50
75
25
50
100
0.96
0.97
0.98
0.99
1
1.01
1.02
1.03
I
D
=1mA
1.04
-25
125
(BR)DS
AM16119v1