Datasheet

Electrical characteristics STD45N10F7, STI45N10F7, STP45N10F7
4/19 DocID024455 Rev 1
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0)
I
D
= 1 mA 100 - V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 100 V 10 µA
V
DS
= 100 V; T
C
=125 °C 100 µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= 20 V 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2.5 4.5 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 22.5 A 0.0145 0.018 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 50 V, f =1 MHz,
V
GS
= 0
- 1640 - pF
C
oss
Output capacitance - 360 - pF
C
rss
Reverse transfer
capacitance
-25 - pF
Q
g
Total gate charge
V
DD
= 50 V, I
D
= 45 A
V
GS
= 10 V
Figure 14
-25 -nC
Q
gs
Gate-source charge - 5.1 - nC
Q
gd
Gate-drain charge - 12.2 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 50 V, I
D
= 22.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
Figure 13
-15 - ns
t
r
Rise time - 17 - ns
t
d(off)
Turn-off delay time - 24 - ns
t
f
Fall time - 8 - ns