Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsSTP45N10F7, MOSFET

This is information on a product in full production.

October 2013 DocID024455 Rev 1 1/19

STD45N10F7, STI45N10F7,

STP45N10F7

N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™

Power MOSFETs in DPAK, I

PAK and TO-220 packages

Datasheet

production data

Figure 1. Internal schematic diagram

Features

• Ultra low on-resistance

• 100% avalanche tested

Applications

• Switching applications

Description

These devices utilize the 7

generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure. The resulting Power

MOSFET exhibits the lowest R

DS(on)

in all

packages.

TAB

DPAK

TAB

TO-220

I PAK

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3

Order codes V

DS(on)

max.

(1)

1. @ V

= 10 V

TOT

STD45N10F7

100 V 0.018 Ω 45 A 60 WSTI45N10F7

STP45N10F7

Table 1. Device summary

Order codes Marking Package Packaging

STD45N10F7

45N10F7

DPAK Tape and reel

STI45N10F7 I

PAK

Tube

STP45N10F7 TO-220

www.st.com

Summary of content (19 pages)

PAGE 1
STD45N10F7, STI45N10F7, STP45N10F7 N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, I2PAK and TO-220 packages Datasheet - production data Features TAB TAB VDS RDS(on) max.(1) ID PTOT 100 V 0.018 Ω 45 A 60 W Order codes 3 1 STD45N10F7 3 12 DPAK STI45N10F7 2 I PAK TAB STP45N10F7 1. @ VGS = 10 V 1 2 • Ultra low on-resistance 3 • 100% avalanche tested TO-220 Applications Figure 1.
PAGE 2
Contents STD45N10F7, STI45N10F7, STP45N10F7 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
STD45N10F7, STI45N10F7, STP45N10F7 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate-source voltage 20 V ID Drain current (continuous) at TC = 25 °C 45 A ID Drain current (continuous) at TC = 100 °C 32 A Drain current (pulsed) 180 A Total dissipation at Tc = 25 °C 60 W IDM (1) PTOT TJ Operating junction temperature Tstg Storage temperature °C -55 to 175 °C 1.
PAGE 4
Electrical characteristics 2 STD45N10F7, STI45N10F7, STP45N10F7 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS= 0) Max. Unit - V VDS = 100 V 10 µA VDS = 100 V; TC =125 °C 100 µA 100 nA 4.5 V 0.0145 0.018 Ω Min. Typ. Max. Unit - 1640 - pF - 360 - pF - 25 - pF - 25 - nC - 5.1 - nC - 12.2 - nC Min. Typ. Max.
PAGE 5
STD45N10F7, STI45N10F7, STP45N10F7 Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 45 A Source-drain current (pulsed) - 180 A 1.1 V Forward on voltage ISD = 45 A, VGS = 0 - trr Reverse recovery time - 53 ns Qrr Reverse recovery charge - 67 nC IRRM Reverse recovery current ISD = 45 A, di/dt = 100 A/µs, VDD = 80 V, Tj = 150 °C - 2.5 A 1.
PAGE 6
Electrical characteristics 2.1 STD45N10F7, STI45N10F7, STP45N10F7 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM16107v1 ID (A) AM16120v1 K δ=0.5 s ai are n) his DS(o t R n n i ax tio m era d by p O ite Lim 100 0.2 0.1 10 100µs 1 10 -1 0.05 0.02 0.01 1ms 10ms 0.1 Tj=175°C Tc=25°C Single pulse 0.01 0.1 Single pulse 10 1 VDS(V) Figure 4. Output characteristics 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 tp(s) 10 0 Figure 5.
PAGE 7
STD45N10F7, STI45N10F7, STP45N10F7 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature AM16114v1 C (pF) AM16115v1 VGS(th) (norm) ID=250µA 1.2 Ciss 1 1000 0.8 Coss 0.6 100 0.4 Crss 0 0 20 40 60 80 VDS(V) Figure 10. Normalized on-resistance vs temperature Figure 11. Source-drain diode forward characteristics AM16116v1 RDS(on) AM16117v1 VSD(V) (norm) 2 0.2 -75 -50 -50 0 25 50 75 100 125150 TJ(°C) ID=22.
PAGE 8
Test circuits 3 STD45N10F7, STI45N10F7, STP45N10F7 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T.
PAGE 9
STD45N10F7, STI45N10F7, STP45N10F7 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
PAGE 10
Package mechanical data STD45N10F7, STI45N10F7, STP45N10F7 Table 8. DPAK (TO-252) type A mechanical data mm Dim. Min. Typ. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 D1 E 5.10 6.40 6.60 E1 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1.00 1.50 (L1) 2.80 L2 0.80 L4 0.60 1.00 R V2 10/19 Max. 0.
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STD45N10F7, STI45N10F7, STP45N10F7 Package mechanical data Figure 19.
PAGE 12
Package mechanical data STD45N10F7, STI45N10F7, STP45N10F7 Figure 20. DPAK footprint (a) Footprint_REV_L a.
PAGE 13
STD45N10F7, STI45N10F7, STP45N10F7 Package mechanical data Table 9. I²PAK (TO-262) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 21.
PAGE 14
Package mechanical data STD45N10F7, STI45N10F7, STP45N10F7 Table 10. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/19 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.
PAGE 15
STD45N10F7, STI45N10F7, STP45N10F7 Package mechanical data Figure 22.
PAGE 16
Packaging mechanical data 5 STD45N10F7, STI45N10F7, STP45N10F7 Packaging mechanical data Table 11. DPAK (TO-252) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 6.8 7 A B0 10.4 10.6 B 1.5 12.1 C 12.8 1.6 D 20.2 G 16.4 50 B1 16/19 Min. Max. 330 13.2 D 1.5 D1 1.5 E 1.65 1.85 N F 7.4 7.6 T K0 2.55 2.75 P0 3.9 4.1 Base qty. 2500 P1 7.9 8.1 Bulk qty. 2500 P2 1.9 2.1 R 40 T 0.25 0.35 W 15.7 16.3 DocID024455 Rev 1 18.4 22.
PAGE 17
STD45N10F7, STI45N10F7, STP45N10F7 Packaging mechanical data Figure 23. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 24. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min.
PAGE 18
Revision history 6 STD45N10F7, STI45N10F7, STP45N10F7 Revision history Table 12. Document revision history 18/19 Date Revision 10-Oct-2013 1 Changes First release.
PAGE 19
STD45N10F7, STI45N10F7, STP45N10F7 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.