Datasheet

Electrical characteristics STI400N4F6, STP400N4F6
4/11 Doc ID 023434 Rev 1
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0)
I
D
= 250 µA 40 V
I
DSS
Zero gate voltage
Drain current (V
GS
= 0)
V
DS
= 40 V 1 µA
V
DS
= 40 V, T
C
=125 °C 100 µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V ± 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 3 4.5 V
R
DS(on)
Static drain-source
on-resistance
V
GS
= 10 V, I
D
= 60 A TBD 1.7 mΩ
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
-
20000
-
pF
C
oss
Output capacitance 1740 pF
C
rss
Reverse transfer
capacitance
1305 pF
Q
g
Total gate charge
V
DD
= 20 V, I
D
= 120 A,
V
GS
= 10 V
-
377
-
nC
Q
gs
Gate-source charge TBD nC
Q
gd
Gate-drain charge TBD nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
= 20 V, I
D
= 60 A
R
G
=4.7 Ω V
GS
= 10 V
-TBD- ns
t
d(off)
t
f
Turn-off-delay time
Fall time
-TBD- ns