Datasheet

1/9October 2003
STP36NF06
STP36NF06FP
N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP
STripFET™ II POWER MOSFET
■ TYPICAL R
DS
(on) = 0.032 Ω
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, HIGH SWITCHING SPEED
TYPE
V
DSS
R
DS(on)
I
D
STP36NF06
STP36NF06FP
60 V
60 V
<0.040
Ω
<0.040
Ω
30 A
18 A
(*)
1
2
3
1
2
3
TO-220 TO-220FP
Ordering Information
ABSOLUTE MAXIMUM RATINGS
(
•)
Pulse width limited by safe operating area.
(*) Current Limited by Package
(1) I
SD
≤
36A, di/dt
≤
400A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 18 A, V
DD
= 45V
SALES TYPE MARKING PACKAGE PACKAGING
STP36NF06 STP36NF06 TO-220 TUBE
STP36NF06FP STP36NF06FP TO-220FP TUBE
Symbol Parameter Value Unit
STP36NF06 STP36NF06FP
V
DS
Drain-source Voltage (V
GS
= 0)
60 V
V
DGR
Drain-gate Voltage (R
GS
= 20 k
Ω
)
60 V
V
GS
Gate- source Voltage ± 20 V
I
D
Drain Current (continuous) at T
C
= 25°C
30 18
(*) A
I
D
Drain Current (continuous) at T
C
= 100°C
21 12 A
I
DM
(
•)
Drain Current (pulsed) 120 72 A
P
tot
Total Dissipation at T
C
= 25°C
70 25 W
Derating Factor 0.47 0.17 W/°C
dv/dt
(1)
Peak Diode Recovery voltage slope 20 V/ns
E
AS
(2)
Single Pulse Avalanche Energy 200 mJ
T
stg
Storage Temperature
-55 to 175 °C
T
j
Max. Operating Junction Temperature
INTERNAL SCHEMATIC DIAGRAM