Datasheet
Table Of Contents
- Figure 1. Internal schematic diagram
- Table 1. Device summary
- 1 Electrical ratings
- 2 Electrical characteristics
- Table 5. On /off states
- Table 6. Dynamic
- Table 7. Switching times
- Table 8. Source drain diode
- 2.1 Electrical characteristics (curves)
- Figure 2. Safe operating area for D2PAK and TO-220
- Figure 3. Thermal impedance for D2PAK, TO-220 and TO-247
- Figure 4. Safe operating area for TO-247
- Figure 5. Output characteristics
- Figure 6. Transfer characteristics
- Figure 7. Gate charge vs gate-source voltage
- Figure 8. Static drain-source on-resistance
- Figure 9. Capacitance variations
- Figure 10. Normalized gate threshold voltage vs. temperature
- Figure 11. Normalized on-resistance vs temperature
- Figure 12. Source-drain diode forward characteristics
- Figure 13. Normalized V(BR)DSS vs temperature
- Figure 14. Output capacitance stored energy
- 3 Test circuits
- 4 Package mechanical data
- 5 Packaging mechanical data
- 6 Revision history

DocID024735 Rev 2 9/21
STB18N60M2, STP18N60M2, STW18N60M2 Test circuits
21
3 Test circuits
Figure 15. Switching times test circuit for
resistive load
Figure 16. Gate charge test circuit
Figure 17. Test circuit for inductive load
switching and diode recovery times
Figure 18. Unclamped inductive load test circuit
Figure 19. Unclamped inductive waveform Figure 20. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μF
V
DD
AM01469v1
VDD
47kΩ
1kΩ
47kΩ
2.7kΩ
1kΩ
12V
V
i=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
V
G
AM01470v1
A
D
D.U.T.
S
B
G
25
Ω
A
A
B
B
R
G
G
FAST
DIODE
D
S
L=100μH
μF
3.3
1000
μF
V
DD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μF
VDD
$0Y
9%5'66
9''
9''
9'
,'0
,'
AM01473v1
VDS
ton
tdon
tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
V
GS