Datasheet
Table Of Contents
- Figure 1. Internal schematic diagram
- Table 1. Device summary
- 1 Electrical ratings
- 2 Electrical characteristics
- Table 5. On /off states
- Table 6. Dynamic
- Table 7. Switching times
- Table 8. Source drain diode
- 2.1 Electrical characteristics (curves)
- Figure 2. Safe operating area for D2PAK and TO-220
- Figure 3. Thermal impedance for D2PAK, TO-220 and TO-247
- Figure 4. Safe operating area for TO-247
- Figure 5. Output characteristics
- Figure 6. Transfer characteristics
- Figure 7. Gate charge vs gate-source voltage
- Figure 8. Static drain-source on-resistance
- Figure 9. Capacitance variations
- Figure 10. Normalized gate threshold voltage vs. temperature
- Figure 11. Normalized on-resistance vs temperature
- Figure 12. Source-drain diode forward characteristics
- Figure 13. Normalized V(BR)DSS vs temperature
- Figure 14. Output capacitance stored energy
- 3 Test circuits
- 4 Package mechanical data
- 5 Packaging mechanical data
- 6 Revision history
DocID024735 Rev 2 7/21
STB18N60M2, STP18N60M2, STW18N60M2 Electrical characteristics
21
Figure 8. Static drain-source on-resistance Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized V
(BR)DSS
vs temperature
R
DS(on)
0.260
0.255
0.250
0.245
0
2
I
D
(A)
(Ω)
0.265
4
V
GS
=10V
0.270
6
8
10
12
AM15840v1
C
100
10
1
0.1
10
V
DS
(V)
(pF)
1
100
Ciss
Coss
Crss
1000
AM15841v1
V
GS(th)
0.8
0.7
T
J
(°C)
(norm)
-50
0.9
-25
50
100
0
25
75
125
1.0
1.1
ID=250 µA
AM15828v1
R
DS(on)
1.3
1.1
0.9
0.7
T
J
(°C)
(norm)
0.5
-50
-25
0
25
I
D
=6.5 A
50
75
100
125
1.5
1.7
1.9
2.1
2.3
2.5
V
GS
=10V
AM15829v1
V
SD
0
2
I
SD
(A)
(V)
4
0
0.2
0.4
0.6
T
J
=-50°C
T
J
=150°C
T
J
=25°C
0.8
6
1
1.2
1.4
8
10
12
AM15842v1
V
(BR)DSS
0.99
0.97
0.95
0.93
T
J
(°C)
(norm)
-50
1.01
I
D
=1mA
-25
50
100
1.03
0
25
75
125
1.05
1.07
1.09
1.11
AM15831v1