Datasheet
Table Of Contents
- Figure 1. Internal schematic diagram
- Table 1. Device summary
- 1 Electrical ratings
- 2 Electrical characteristics
- Table 5. On /off states
- Table 6. Dynamic
- Table 7. Switching times
- Table 8. Source drain diode
- 2.1 Electrical characteristics (curves)
- Figure 2. Safe operating area for D2PAK and TO-220
- Figure 3. Thermal impedance for D2PAK, TO-220 and TO-247
- Figure 4. Safe operating area for TO-247
- Figure 5. Output characteristics
- Figure 6. Transfer characteristics
- Figure 7. Gate charge vs gate-source voltage
- Figure 8. Static drain-source on-resistance
- Figure 9. Capacitance variations
- Figure 10. Normalized gate threshold voltage vs. temperature
- Figure 11. Normalized on-resistance vs temperature
- Figure 12. Source-drain diode forward characteristics
- Figure 13. Normalized V(BR)DSS vs temperature
- Figure 14. Output capacitance stored energy
- 3 Test circuits
- 4 Package mechanical data
- 5 Packaging mechanical data
- 6 Revision history

Electrical characteristics STB18N60M2, STP18N60M2, STW18N60M2
6/21 DocID024735 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D
2
PAK and
TO-220
Figure 3. Thermal impedance for D
2
PAK,
TO-220 and TO-247
Figure 4. Safe operating area for TO-247 Figure 5. Output characteristics
I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM15835v1
I
D
10
1
0.1
0.1
1
100
V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM15836v1
I
D
15
10
5
0
0
10
V
DS
(V)
(A)
5
15
20
4V
5V
6V
V
GS
=7, 8, 9, 10V
20
25
30
AM15837v1
Figure 6. Transfer characteristics Figure 7. Gate charge vs gate-source voltage
I
D
10
0
0
4
V
GS
(V)
8
(A)
2
6
20
30
V
DS
=18V
10
5
15
25
AM15838v1
VDS
V
GS
6
4
2
0
0
Q
g
(nC)
(V)
5
8
10
V
DD
=480V
300
200
100
0
400
V
DS
10
500
V
DS
(V)
I
D
=13A
15
20
25
12
AM15839v1