Datasheet

Electrical characteristics
STF140N8F7
6/12
DocID023888 Rev 3
VSD
0.6
20
ID(A)
50
40
60
TJ= -55°C
30
70 80 90
0.7
0.8
0.9
1
1.1
TJ= 25°C
TJ= 175°C
Figure 8: Gate charge vs. gate-source voltage
Figure 9: Capacitance variations
Figure 10: Normalized gate threshold voltage
vs. temperature
Figure 11: Normalized on resistance vs.
temperature
Figure 12: Source-drain diode forward characteristics
VGS
6
4
2
0
0
40
Qg(nC)
80
(V)
8
10
12
20
60
100
C
3000
2000
1000
0
0 20
VDS(V)
40
(pF)
Ciss
4000
10 30 50
Coss
Crss
60 70
5000
6000
7000
8000
VGS(th)
1
0.8
0.6
0.4
-75
TJ(°C)
25
1.2
0
75 125
-25
175
ID= 250µA
RDS(on)
0.8
0.6
0.4
-75
TJ(°C)
25
1.8
0
75 125
-25
175
VGS= 10V
1
1.2
1.4
1.6