Datasheet

Electrical characteristics
STF140N8F7
4/12
DocID023888 Rev 3
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 4: On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown voltage
V
GS
= 0, I
D
= 250 µA
80
V
I
DSS
Zero gate voltage
Drain current
V
GS
= 0, V
DS
= 80 V
1
µA
V
GS
= 0, V
DS
= 80 V,
T
J
=125 °C
10
µA
I
GSS
Gate-source leakage
current
V
DS
= 0, V
GS
= ±20 V
±100
nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 µA
2.5
4.5
V
R
DS(on)
Static drain-source on-resistance
V
GS
= 10 V, I
D
= 32 A
3.5
4.3
mΩ
Table 5: Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
Input capacitance
V
GS
= 0, V
DS
= 40 V,
f = 1 MHz
-
6340
-
pF
C
oss
Output capacitance
-
1195
-
pF
C
rss
Reverse transfer capacitance
-
105
-
pF
Q
g
Total gate charge
V
DD
= 40 V, I
D
= 64 A,
V
GS
= 10 V
-
96
-
nC
Q
gs
Gate-source charge
-
30
-
nC
Q
gd
Gate-drain charge
-
26
-
nC
Table 6: Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
Turn-on delay time
V
DD
= 40 V, I
D
= 45 A R
G
= 4.7 Ω,
V
GS
= 10 V
-
26
-
ns
t
r
Rise time
-
51
-
ns
t
d(off)
Turn-off-delay time
-
82
-
ns
t
f
Fall time
-
44
-
ns
Table 7: Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
64
A
I
SDM
(1)
Source-drain current (pulsed)
-
256
A
V
SD
(2)
Forward on voltage
V
GS
= 0, I
SD
= 64 A
-
1.2
V
t
rr
Reverse recovery time
I
SD
= 64 A, di/dt = 100 A/µs,
V
DD
= 60 V, T
j
= 150 °C
-
58
ns
Q
rr
Reverse recovery charge
-
92
nC
I
RRM
Reverse recovery current
-
3.2
A
Notes:
(1)
Pulse width is limited by safe operating area
(2)
Pulse test: pulse duration = 300 µs, duty cycle 1.5%