Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsSTP140N8F7, MOSFET

October 2014

DocID023888 Rev 3

1/12

This is information on a product in full production.

www.st.com

STF140N8F7

N-channel 80 V, 3.5 mΩ typ., 64 A STripFET™ F7

Power MOSFET in a TO-220FP package

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order code

DS(on)

max.

TOT

STF140N8F7

80 V

4.3 mΩ

64 A

35 W

 Among the lowest R

DS(on)

on the market

 Excellent figure of merit (FoM)

 Low C

rss

iss

ratio for EMI immunity

 High avalanche ruggedness

Applications

 Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

Marking

Package

Packaging

STF140N8F7

140N8F7

TO-220FP

Tube

TO-220FP

Summary of content (12 pages)

PAGE 1
STF140N8F7 N-channel 80 V, 3.5 mΩ typ., 64 A STripFET™ F7 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT STF140N8F7 80 V 4.
PAGE 2
Contents STF140N8F7 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 5 3 Test circuits ..................................................................................... 7 4 Package mechanical data .................................................
PAGE 3
STF140N8F7 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25 °C 64 (1) A A Drain current (continuous) at TC = 100 °C 45(1) IDM(2) Drain current (pulsed) 256 A ID PTOT Total dissipation at TC = 25 °C 35 W EAS(3) Single pulse avalanche energy 515 mJ VISO Insulation withstand voltage (RMS) from all three leads to external he
PAGE 4
Electrical characteristics 2 STF140N8F7 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0, ID = 250 µA Min. Typ. Max. 80 Unit V VGS = 0, VDS = 80 V 1 µA VGS = 0, VDS = 80 V, TJ=125 °C 10 µA Gate-source leakage current VDS = 0, VGS = ±20 V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4.
PAGE 5
STF140N8F7 2.1 Electrical characteristics Electrical characteristics (curves) Figure 3: Thermal impedance Figure 2: Safe operating area K ID (A) δ= 0.5 0.2 100 -1 0.1 10 0.05 10 100µs Operation in this area is 0.02 Limited by max RDS(on) 10 1ms Tj=175°C Tc=25°C 1 Single pulse 10ms Sinlge pulse 10 0.1 0.1 1 -3 10 V DS(V) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 tp(s) Figure 5: Transfer characteristics Figure 4: Output characteristics GIPD130920130919MT ID (A) -2 0.
PAGE 6
Electrical characteristics STF140N8F7 Figure 8: Gate charge vs. gate-source voltage Figure 9: Capacitance variations V GS (V) C (pF) 8000 12 7000 10 C iss 6000 8 5000 6 4000 3000 4 2000 2 0 1000 0 20 40 80 60 0 0 100 Q g(nC) 10 20 30 40 50 60 C oss C rss 70 V DS(V) Figure 11: Normalized on resistance vs. temperature Figure 10: Normalized gate threshold voltage vs. temperature V GS(th) R DS(on) V GS= 10V 1.2 1.8 ID= 250µA 1.6 1 1.4 1.2 0.8 1 0.8 0.6 0.6 0.
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STF140N8F7 3 Test circuits Test circuits Figure 13: Switching times test circuit for resistive load Figure 15: Test circuit for inductive load switching and diode recovery times Figure 17: Unclamped inductive waveform DocID023888 Rev 3 Figure 14: Gate charge test circuit Figure 16: Unclamped inductive load test circuit Figure 18: Switching time waveform 7/12
PAGE 8
Package mechanical data 4 STF140N8F7 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
PAGE 9
STF140N8F7 4.
PAGE 10
Package mechanical data STF140N8F7 Table 8: TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/12 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.
PAGE 11
STF140N8F7 5 Revision history Revision history Table 9: Document revision history Date Revision 18-Sep-2013 1 Changes First release.  22-Aug-2014 2 10-Oct-2014 3   The part numbers STH140N8F7-2 and STP140N8F7 have been moved to a separate datasheet.
PAGE 12
STF140N8F7 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.