Datasheet

This is information on a product in full production.
December 2013 DocID024710 Rev 2 1/24
24
STB10N60M2, STD10N60M2,
STP10N60M2, STU10N60M2
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Q
g
Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages
Datasheet
production data
Figure 1. Internal schematic diagram
Features
Extremely low gate charge
Lower R
DS(on)
x area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
AM15572v1
, TAB
TO-220
1
2
3
TAB
1
3
TAB
DPAK
3
2
1
TAB
IPAK
1
3
TAB
D PAK
2
Order codes V
DS
@ T
Jmax
R
DS(on)
max
I
D
STB10N60M2
650 V 0.600 Ω 7.5 A
STD10N60M2
STP10N60M2
STU10N60M2
Table 1. Device summary
Order codes Marking Package Packaging
STB10N60M2
10N60M2
D
2
PAK
Tape and reel
STD10N60M2 DPAK
STP10N60M2 TO-220
Tube
STU10N60M2 IPAK
www.st.com

Summary of content (24 pages)